Use of Resistivity Measurements for Indirect Determination of Silane and Germane Purity and Corresponding Methods
A technology of resistivity and silane, applied in the field of indirect determination of the purity of silane and germane, can solve the problems of unsatisfied detection limit and determination limit, difficulty in determining impurities, etc., and achieve the effect of continuous process inspection without the possibility of pollution
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1
[0043] The high-purity SiCl has been transferred from the storage tank through the pipeline 4 Transfer to the evaporator, which in turn was connected to the gas inlet of the ASM2000 epitaxial reactor. In the presence of hydrogen gas (partial pressure H 2 1 bar, SiCl 4 for 10 -3 bar), the gaseous SiCl 4 Deposited on 100 mm silicon wafers (p-type, approx. 30 Ωcm) at 1150 °C up to a layer thickness of 23 μm. The coated wafers had been pretreated according to SEMI MF 674 and then measured on a SRP measurement device (SSM2000) according to SEMI MF 525 / 672. The curve goes toward no maximum. Resistivity in the flat part range (see attached figure 2 dashed curve), at >100 Ωcm. The course of the curve can infer p-type impurities such as boron. It has been confirmed that the carrier concentration is 14 cm -3 .
example 2
[0045] "Electronic grade" dichlorosilane has been introduced via piping from a storage tank to the gas inlet of the ASM 2000 epitaxial reactor. In the presence of hydrogen gas (partial pressure H 2 at 1 bar, SiH 2 Cl 2 for 10 -3 bar), gaseous dichlorosilane was deposited at 950 °C on a 100 mm silicon wafer (p-type, about 30 Ωcm) to a layer thickness of 16 μm. The coated wafers had been pretreated according to SEMI MF 674 and then measured on an SRP measurement device (SSM 2000) according to SEMI MF 525 / 672. The curve trend has a maximum value. Resistivity in the flat part range (see attached figure 2 The curve of the solid line), located at >400Ωcm. The course of the curve can infer n-type impurities such as phosphorus or arsenic. It has been confirmed that the carrier concentration is 13 cm -3 .
example 3
[0047] High-purity monosilane has been introduced from the storage tank to the gas inlet of the ASM 2000 epitaxial reactor through a pipeline. In the presence of hydrogen gas (partial pressure H 2 at 1 bar, SiH 4 for 10 -3 bar), gaseous monosilane was deposited at 950 °C on a 100 mm silicon wafer (p-type, about 30 Ωcm) to a layer thickness of 15 μm. The coated wafers had been pretreated according to SEMI MF 674 and then measured on an SRP measurement device (SSM 2000) according to SEMI MF 525 / 672. The curve goes toward no maximum. Resistivity in the flat part range (see attached figure 2 dashed curve), at >800 Ωcm. The course of the curve can infer p-type impurities such as boron. It has been confirmed that the carrier concentration is 13 cm -3 .
[0048] list of reference symbols
[0049] (1) Production and cleaning
[0050] (2) Reserve tank
[0051] (3) filling
[0052] (4) send
[0053] (5) Deposition (epitaxy)
[0054] (6) Resistivity measurement
[0055] ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More