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Semiconductor device safety authentication method

A security authentication and semiconductor technology, applied in the field of security authentication of semiconductor devices, can solve problems such as easy deciphering, encryption and decryption method retention, etc.

Active Publication Date: 2017-08-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a semiconductor device security authentication method to solve the problem that the encryption and decryption method in the prior art stays at the digital level and is relatively easy to decipher

Method used

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  • Semiconductor device safety authentication method
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  • Semiconductor device safety authentication method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] Please refer to figure 2 and Figure 2a-2e The content shown is to understand the manufacturing method of the transistor in this embodiment, and the steps of forming the transistor include:

[0070] First, execute step S10, please refer to Figure 2a , forming a device layer 110 on the semiconductor substrate;

[0071] Next, execute step S11, please refer to Figure 2b , forming a bottom anti-reflection layer 111 on the device layer 110;

[0072] Next, execute step S12, please refer to Figure 2c , forming a patterned mask layer on the bottom anti-reflection layer 111, the patterned mask layer 112 exposing part of the surface of the bottom anti-reflection layer 111 and part of the surface of the device layer 110;

[0073] Next, execute step S13, please refer to Figure 2d , removing the part of the surface of the device layer exposed by the patterned mask layer 112; here, shrinking the device layer 110 exposed by the patterned mask layer 112 refers to step S12, s...

Embodiment 2

[0076] Please refer to image 3 and Figure 3a-3e The content shown understands the manufacturing method of the thin-film resistor (Rs) in this embodiment, and the steps of forming the thin-film resistor include:

[0077] First, execute step S20, please refer to Figure 3a , forming a device layer on the semiconductor substrate;

[0078] Next, execute step S21, please refer to Figure 3b , forming a bottom anti-reflection layer 211 on the device layer 210;

[0079] Next, execute step S22, please refer to Figure 3c , forming a patterned mask layer 212 on the bottom anti-reflection layer 211, the patterned mask layer 212 exposing part of the surface of the bottom anti-reflection layer 211 and part of the surface of the device layer 210;

[0080] Next, execute step S23, please refer to Figure 3d , removing part of the surface of the device layer 210 exposed by the patterned mask layer 212;

[0081] Next, execute step S24, please refer to Figure 3e , removing the patter...

Embodiment 3

[0083] Please refer to Figure 4 and Figure 4a ~ 4f Shown content comprehends the manufacturing method of contact resistance (Rc) in the present embodiment, compares Figure 4 and image 3 flow chart and Figure 3e and Figure 4f It can be seen that the difference between the two is that due to the different types of circuits prepared, there are differences in the required process steps, that is, Rc has one more contact window (CT) 313 than Rs in the structure, and the steps of forming the contact resistance include:

[0084] First, execute step S30, please refer to Figure 4a , forming a device layer 310 on the semiconductor substrate;

[0085] Next, execute step S31, please refer to Figure 4b , forming a bottom anti-reflection layer 311 on the device layer 310;

[0086] Next, execute step S32, please refer to Figure 4c , forming a patterned mask layer 312 on the bottom anti-reflection layer 311, the patterned mask layer 312 exposing part of the surface of the bott...

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Abstract

The invention provides a semiconductor device safety authentication method. A semiconductor substrate is provided, a semiconductor device and at least one circuit element matrix are formed on the semiconductor substrate, the circuit element matrix comprises multiple circuit elements of the same type, each circuit element comprises a bottom antireflection layer, and the bottom antireflection layers of at least partial circuit elements of the circuit element matrix have different shapes; the element parameter values of any two circuit elements in the circuit element matrix are compared, and the compared circuit elements each time are not exactly the same so that multiple comparison results are acquired; and a sequence formed by the acquired multiple comparison results acts as the secret key of the semiconductor device. The bottom antireflection layers of at least partial circuit elements of the circuit element matrix have different shapes so that the element parameter values of at least partial circuit elements of the circuit element matrix are different, the difference of the element parameter values is utilized to be applied to safety authentication of the semiconductor device and thus the method has wide development prospect.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a security authentication method for semiconductor devices. Background technique [0002] As the application of digital codes becomes more and more widespread, more and more information is buried in encoding methods on the carrier medium. Most of the encryption methods of the codes buried in the carrier medium use digital encryption and decryption methods. This encryption and decryption method stays in principle. On a digital level, it is therefore always decipherable, so finding a way to make it undecipherable is the purpose of this invention. [0003] On the other hand, the bottom anti-reflective layer (BARC) has a shrinkage phenomenon on the device layer, and the shape and size after shrinkage are uncontrollable. Specifically, in the actual process of manufacturing circuit components, an organic bottom layer anti-reflection layer (BARC) is usually coated o...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02
Inventor 呼翔彭坤施平罗学辉赵连国李强王海莲
Owner SEMICON MFG INT (SHANGHAI) CORP