Manufacturing method of crystalline silicon cell

Abstract

The invention relates to a manufacturing method of a crystalline silicon battery piece. The manufacturing method comprises a tubular PECVD film coating step, wherein the tubular PECVD film coating step comprises the steps of carrying out N2O treatment and silicon nitride silicon nitride layer film coating at least twice on tubular PECVD, and carrying out N2O treatment after the first time of silicon nitride layer film coating; and the crystalline silicon battery piece is free of whitening after sintering and is of PID resistance. By adopting the manufacturing method of the crystalline silicon battery piece in the battery, under the condition that the film thickness refractive index is unchanged, an original mono-layer SiNx film is changed into a double-layer or multi-layer SiNx film (inner-layer high refractive index SiN1 and outer-layer low refractive index SiN2), and simultaneously N2O is added after SiN2 for carrying out oxidation blowing cleaning on the surface, so that the whitening problem after sintering can be solved, and additional benefits of PID resistance promotion caused by the fact that the N2O is of oxidation capacity are also brought.

Description

technical field [0001] The present invention relates to the technical field of crystalline silicon solar cells, in particular to a manufacturing method, in particular to a manufacturing method of crystalline silicon solar cells. Background technique [0002] With the continuous improvement of the industry level, customers have higher and higher requirements on the quality of anti-PID products. From the original PECVD high refractive index anti-PID method, to N 2 O pretreatment anti-PID method, and then to the current mainstream after etching O 3 Oxidation anti-PID method (that is, the surface of the silicon wafer is covered with a layer of O 3 oxide layer). Currently O 3 Oxidation anti-PID method can greatly improve the reliability of anti-PID in the industry, but it also introduces a new problem of whitening after sintering. At the same time, because this appearance difference cannot be identified after PECVD coating, it brings great troubles to the investigation and so...

AI Technical Summary

Problems solved by technology

Currently O 3 Oxidation anti-PID method can greatly improve the reliability of anti-PID in the industry, but it also introduces a new problem of whitening after sintering. At the same time, because this appearance difference cannot be identified after PECVD coating, it brings great troubles to the investigation and solution process of manufacturing enterprises.

[0003] Compared with conventional stains, whitening after sintering cannot be distinguished by PECVD appearance, which brings great troubles to manufacturing companies.

At the same time, since this problem can only be found in the finished battery after printing, it can only be downgraded, which will bring economic losses to the enterprise.

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