Non-volatile memory read operation method, device and related equipment

Abstract

The embodiment of the application discloses a reading operation method and device of a non-volatile memory and related equipment. The method includes: carrying out prepulsing on word lines, and applying a reading passing voltage on the word lines, executing at least two data reading operations in sequence, wherein each data reading operation specifically comprises applying a reading voltage, which corresponds to the current data reading operation, on a selected word line; and carrying out reading on data, which are stored in a storage cell pipe on the selected word line, through a bit line. Postpulsing, recovery, and re-prepulsing on the word lines are not needed between two times of data reading, the different reading voltages are continuously applied on the selected word line to carry out reading on the stored data thereof, repeated pulsing, postpulsing and recovery processes in each reading operation are saved, a data reading speed of the non-volatile memory is increased, and dynamic power consumption in a reading operation process is reduced.

Description

technical field [0001] The present application relates to the technical field of memory, and in particular, to a nonvolatile memory read operation method, device and related equipment. Background technique [0002] The non-volatile memory includes a plurality of storage unit tubes arranged in a matrix for storing data. The storage unit tubes are divided into several blocks (blocks), and each block is further divided into several pages (pages). When reading and writing operations, it is generally performed in units of pages. The memory cell tube to be operated is locked through the connected word line (word line, WL) and bit line (bit line, BL), and the read voltage is applied to the selected word line. , and apply a read-through voltage to the remaining unselected word lines to turn them on, and read the data on the selected memory cell transistor by sensing the voltage or current on the bit lines. [0003] At present, non-volatile memories are mainly divided into three typ...

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Problems solved by technology

[0004] In view of this, the present application provides a non-volatile memory read operation method, device and related equipment, which can solve the problem of slow read operation speed and power consumption of non-volatile memory with multiple bits per cell in the prior art. high problem

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