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Lithographic apparatus and method in lithographic process

A technology of lithography equipment and gas, which is applied in the direction of microlithography exposure equipment, photomechanical equipment, photosensitive material processing, etc., and can solve problems such as the influence of projection radiation beam and the influence of measurement radiation beam

Active Publication Date: 2020-02-21
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Local fluctuations in the properties of the ambient gas may affect the measurement radiation beam passing through it
Projected radiation beams can be affected in the same way as measured radiation beams

Method used

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  • Lithographic apparatus and method in lithographic process
  • Lithographic apparatus and method in lithographic process
  • Lithographic apparatus and method in lithographic process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] figure 1 A lithographic apparatus according to an embodiment of the invention is schematically depicted. Equipment includes:

[0016] - an illumination system (illuminator) IL configured to condition the radiation beam B (eg UV radiation);

[0017] - a support structure (eg mask table) MT configured to support a patterning device (eg mask) MA and connected to a first positioner PM configured to accurately position the patterning device according to certain parameters;

[0018] - a substrate table (e.g., a wafer table) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner configured to accurately position the substrate according to certain parameters PW; and

[0019] - a projection system (e.g. a refractive projection lens system) PS configured to project the pattern imparted to the projection radiation beam B by the patterning device MA onto a target portion C of the substrate W (e.g. comprising one or more dies) . ...

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PUM

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Abstract

A lithographic apparatus includes a first component (WT) and a second component (G) configured to undergo relative movement relative to each other. The first component has a first surface (1). The second component has a second surface (2). The first surface and the second surface face each other. The first surface houses a barrier system (70) configured to provide a barrier operable to reduce or prevent the influx of ambient gases into the protected volume (90) of gas between the first surface and the second surface. . The barrier system includes: at least one curtain opening (71) adapted for flow of curtain gas therethrough for establishing a gas curtain (81) surrounding a portion of the protected volume adjacent the first surface, and at least one An inner entrainment opening (72) adapted for flow of inner entrainment gas (82) therethrough for being entrained into the flow of curtain gas. The lithographic apparatus is configured such that the flow of entrained gas is less turbulent than the flow of curtain gas. The at least one inner entrainment opening is radially inward of the at least one curtain opening relative to the protected volume.

Description

[0001] Cross-references to related applications [0002] This application claims priority from EP application 15164217.0 filed on April 20, 2015, the entire content of which is incorporated herein by reference. Technical field [0003] The present invention relates to photolithographic apparatus and methods in the photolithographic process. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. Lithographic equipment may be used, for example, in the fabrication of integrated circuits (ICs). In this case, a patterning device, alternatively called a mask or reticle, may be used to generate the circuit patterns to be formed on the individual layers of the IC. The pattern may be transferred to a target portion (eg, a portion of the die, one or several dies) on a substrate (eg, a silicon wafer). The pattern is typically transferred by imaging onto a layer of radiation-sen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70908G03F7/70716G03F7/36H01L21/0274
Inventor J·P·克罗斯K·N·S·库特奥R·埃尔鲍布希R·J·T·鲁滕P·J·C·H·斯姆德斯M·L·P·维瑟J·S·C·韦斯特拉肯
Owner ASML NETHERLANDS BV