Thermal Impedance Topology and Thermal Power Filter

Abstract

The invention provides a thermal impedance topology structure and a thermal power filter. The thermal impedance topology structure comprises a controlled thermal power source, a controlled temperaturesource, a thermal impedance unit and the thermal power filter; a first end of the controlled thermal power source is connected with a first end of the thermal power filter and forms a thermal power input port of the thermal impedance topology; a second end of the controlled power source is connected with a first unit of the thermal impedance unit and forms a temperature output port of the thermalimpedance topology; a second end of the thermal power filter forms a thermal power output port of the thermal impedance topology; a second end of the thermal impedance unit is connected with a firstend of the controlled temperature source; the second end of the controlled temperature source forms a temperature input port of the thermal impedance topology. According to the thermal impedance topology structure and the thermal power filter, thermal behavior characteristics in two aspects of thermal conductor temperature and thermal power can be correctly described, so that more correct prediction for inner and outer dynamic temperatures power semiconductor devices can be realized.

Description

Technical field[0001]The present invention relates to the technical field of power electronics applications, in particular, to a thermal impedance topology and a thermal power filter, especially a thermal impedance topology and a thermal power filter applied to power semiconductor devices.Background technique[0002]Power semiconductor devices need to withstand greater voltage and current stress during operation, and are the most expensive components and main heat sources in power electronic devices. The temperature of power semiconductor devices is closely related to the life and cost of the entire power electronic system, and is also important information to ensure the safe operation of the system. Therefore, how to accurately obtain the dynamic temperature characteristics of power semiconductor devices under working conditions is very necessary to ensure the reliable operation of the system and optimize its design.[0003]The thermal behavior of power semiconductor devices includes t...

AI Technical Summary

Problems solved by technology

However, most of the existing thermal impedance units and the thermal impedance networks they constitute are only suitable for the description of temperature behavior, but cannot accurately characterize the thermal power behavior of devices.

Traditional thermal impedance units and thermal impedance networks often cannot accurately predict the actual temperature characteristics of power semiconductor devices when considering complex factors such as the external heat dissipation system of the device and the internal multi-chip thermocouples

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