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Cross-Coupled Clock Signal Distribution Layout In Multi-Height Sequential Cells For Uni-Directional M1

A signal and signal propagation technology, applied in the direction of generating/distributing signals, electrical components, special data processing applications, etc., can solve the problems of large area, consumption, integration difficulties, etc.

Active Publication Date: 2018-02-09
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As semiconductor devices are manufactured in smaller sizes, manufacturers of semiconductor devices find it more difficult to integrate larger numbers of devices on a single chip
In addition, modern processing technologies impose more constraints on semiconductor device layout design, which may result in certain semiconductor layout designs consuming significant area on metal-oxide-semiconductor (MOS) devices

Method used

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  • Cross-Coupled Clock Signal Distribution Layout In Multi-Height Sequential Cells For Uni-Directional M1
  • Cross-Coupled Clock Signal Distribution Layout In Multi-Height Sequential Cells For Uni-Directional M1
  • Cross-Coupled Clock Signal Distribution Layout In Multi-Height Sequential Cells For Uni-Directional M1

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Embodiment Construction

[0013] The detailed description set forth below in connection with the accompanying drawings is intended as a description of various configurations and is not intended to represent the only configurations in which the concepts described herein may be practiced. The detailed description includes specific details for the purpose of providing a thorough understanding of various concepts. It will be apparent, however, to one skilled in the art that these concepts may be practiced without these specific details. In some instances, well-known structures and components are shown in block diagram form in order to avoid obscuring such concepts. The apparatus and methods will be described in the following detailed description, and may be illustrated by various blocks, modules, components, circuits, steps, procedures, algorithms, elements, etc. in the accompanying drawings.

[0014] figure 1 is a diagram showing the multi-bit flip-flop disk 100 . Such as figure 1 As shown, multi-bi...

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Abstract

A MOS device includes first, second, third, and fourth interconnects. The first interconnect (402) extends on a first track in a first direction. The first interconnect is configured in a metal layer.The second interconnect (404) extends on the first track in the first direction. The second interconnect is configured in the metal layer. The third interconnect (408) extends on a second track in the first direction. The third interconnect is configured in the metal layer. The second track is parallel to the first track. The third interconnect is coupled to the second interconnect. The second and third interconnects (404. 408) are configured to provide a first signal (Clk). The fourth interconnect (410) extends on the second track in the first direction. The fourth interconnect is configuredin the metal layer. The fourth interconnect is coupled to the first interconnect. The first and fourth interconnects (402, 410) are configured to provide a second signal (Clk) different than the first signal.

Description

[0001] Cross References to Related Applications [0002] This application claims a U.S. patent application entitled "CROSS-COUPLE IN MULTI-HEIGHT SEQUENTIAL CELLS FOR UNI-DIRECTIONAL M1," filed May 27, 2015 No. 14 / 723,357, the entire contents of which are expressly incorporated herein by reference. technical field [0003] The present disclosure generally relates to cross-coupling structures in multi-height sequential cells for unidirectional M1. Background technique [0004] As semiconductor devices are manufactured at smaller sizes, manufacturers of semiconductor devices find it more difficult to integrate greater numbers of devices on a single chip. In addition, modern processing techniques impose more constraints on semiconductor device layout designs, which may result in certain semiconductor layout designs consuming significant areas on metal-oxide-semiconductor (MOS) devices. Therefore, improvements in semiconductor layout design are needed to overcome such limitat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G06F1/10H01L23/528H01L27/02H01L27/088H01L27/118
CPCH01L23/5221H01L23/528H01L29/78G06F1/10G06F30/39H01L23/5286H01L27/0207H01L27/11807H01L2027/11875H01L2027/11879H01L27/088
Inventor M·古普塔陈向东权武尚
Owner QUALCOMM INC