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A three-step pre-dipping method for TSV electroplating

A through-silicon via and pre-dipping technology, applied in the field of 3D packaging, can solve the problems of complex process, shedding of the seed layer and low efficiency, and achieve the effect of shortening the process time, improving the efficiency and reducing the cost.

Active Publication Date: 2020-07-10
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides a three-step pre-wetting method for TSV electroplating, thereby solving the problems of high cost, complicated process, easy seed layer falling off, low efficiency and problems in the prior art. Unsatisfactory technical issues

Method used

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  • A three-step pre-dipping method for TSV electroplating
  • A three-step pre-dipping method for TSV electroplating
  • A three-step pre-dipping method for TSV electroplating

Examples

Experimental program
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Effect test

Embodiment 1

[0031] Such as figure 2 As shown, the TSV wafer of the seed copper layer is immersed vertically downward and immersed in the immersion solution, and the angle between the TSV wafer of the seed copper layer and the liquid surface of the immersion solution is 90°, as shown in image 3 As shown, the immersion speed of the TSV wafer with the seed copper layer is 5mm / s. When the TSV wafer with the seed copper layer is completely wetted, an incipient wetted wafer is obtained. Due to the high wetting property of ethanol to the seed copper (the contact angle is close to 0°), the ethanol will completely wet and fill the inside of the TSV. The TSVs have a pore diameter of 3 μm, a pore depth-to-diameter ratio of 15:1, and an immersion solution of absolute ethanol. Immerse the incipient wet wafer vertically downward and soak it in deionized water. Due to the miscibility of absolute ethanol and water in any ratio, the ethanol in the TSV will dissolve in the water, so that the deionized w...

Embodiment 2

[0033] Immerse the TSV wafer of the seed copper layer and soak it in the wetting solution. The angle between the TSV wafer of the seed copper layer and the liquid level of the immersion solution is 45°, such as Figure 4 As shown, the immersion speed of the TSV wafer with the seed copper layer is 5mm / s. When the TSV wafer with the seed copper layer is completely wetted, an incipient wetted wafer is obtained. Due to the high wetting property of ethanol to the seed copper (the contact angle is close to 0°), the ethanol will completely wet and fill the inside of the TSV. The TSVs have a pore diameter of 3 μm, a pore depth-to-diameter ratio of 15:1, and an immersion solution of absolute ethanol. Dip the incipient wet wafer into deionized water. Due to the miscibility of absolute ethanol and water in any ratio, the ethanol in the TSV will dissolve in the water, so that the deionized water can completely fill the TSV and clean the inside of the TSV. The included angle between the i...

Embodiment 3

[0035] Dip the TSV wafer of the seed copper layer vertically downwards and soak it in the immersion solution. The immersion speed of the wafer is 5mm / s. When the TSV wafer of the seed copper layer is completely wetted, an incipient wetted wafer is obtained. Due to the high wetting property (contact angle close to 0°) of ethanol to the seed copper, ethanol It will be possible to completely infiltrate and fill the interior of the TSV. The TSVs have a pore diameter of 3 μm, a pore depth-to-diameter ratio of 15:1, and an immersion solution of absolute ethanol. Immerse the incipient wet wafer vertically downward and soak it in deionized water. Due to the miscibility of absolute ethanol and water in any ratio, the ethanol in the TSV will dissolve in the water, so that the deionized water will completely fill the TSV, realizing the TSV Internal cleaning. The angle between the liquid surface of the incipient wetting wafer and the deionized water is 0°, and the immersion speed of the...

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Abstract

The invention discloses a three-step pre-wetting method for through-silicon via electroplating, which includes: immersing the through-silicon via wafer of the seed copper layer and soaking it in the wetting solution, when the through-silicon via wafer of the seed copper layer is completely wetted , the incipient wet wafer is obtained; the incipient wet wafer is dipped and soaked in deionized water to obtain the re-wetted wafer; The inside of the through-hole, thereby realizing the wetting inside the hole of the through-silicon via. The invention can realize the infiltration of the through-silicon holes with much higher depth-to-diameter ratio, without causing problems such as seed layer falling off, reducing the cost, greatly shortening the process time, and improving the efficiency.

Description

technical field [0001] The invention belongs to the field of 3D packaging, and more specifically relates to a three-step pre-wetting method for through-silicon hole electroplating. Background technique [0002] In through-silicon via plating, small-diameter TSVs (through-silicon vias) can support higher circuit densities. However, a smaller aperture means a higher aspect ratio. In addition, in order to be compatible with other 3D integration processes, the TSV plating process is often completed before wafer thinning, which means that the plating filling aspect ratio must exceed 10: 1 blind hole. Due to the surface tension of the electroplating solution, such a depth-to-diameter ratio will make it difficult for the plating solution to completely infiltrate the inside of the blind hole, which will result in pores in the blind hole after electroplating or even completely unable to fill. [0003] High vacuum can wet the higher aspect ratio, so for TSVs with high aspect ratio, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768C25D7/12
CPCH01L21/76882C25D7/123
Inventor 李操费鹏刘胜
Owner HUAZHONG UNIV OF SCI & TECH