Tape for semiconductor wafer processing and semiconductor wafer processing method

Abstract

A tape for processing a semiconductor wafer, a method for producing a tape for processing a semiconductor wafer, and a method for processing a semiconductor wafer, the tape for processing a semiconductor wafer having an adhesive layer on at least one surface of a base film, and the tape for processing a semiconductor wafer It is characterized in that the adhesive of the adhesive layer is a radiation-curable adhesive with at least a side chain selected from the group consisting of ethylenically unsaturated groups (radiation polymerizable carbon-carbon double bonds and ethylenic double bonds). bond), acrylic pressure-sensitive base resin containing no monomeric unit derived from alicyclic (meth)acrylate, and having at least 2 ethylenically unsaturated groups (radiation polymerizable carbon) in the molecule resin or oligomer in a urethane acrylate oligomer having a carbon double bond and an ethylenic double bond), and the adhesive has an ethylenic saturated group.

Description

technical field [0001] The present invention relates to an adhesive tape for semiconductor wafer processing and a semiconductor wafer processing method. Background technique [0002] A semiconductor package is manufactured by slicing a high-purity silicon single crystal or the like into a semiconductor wafer, and then forming an integrated circuit on the surface of the semiconductor wafer by ion implantation, etching, etc., thereby manufacturing a semiconductor package. The semiconductor wafer is processed to a desired thickness by grinding, polishing, or the like on the back surface of the semiconductor wafer on which the integrated circuit is formed. At this time, in order to protect the integrated circuits formed on the surface of the semiconductor wafer, a tape for protecting the surface of the semiconductor wafer (hereinafter also simply referred to as "surface protection tape") is used. [0003] The semiconductor wafers subjected to backside grinding are stored in sem...

AI Technical Summary

Problems solved by technology

Since there is no need to stack chips in wafer-level packages, there is no such thing as a memory-based semiconductor wafer that is ground to an extremely thin thickness of 50 μm or less. However, since it has a high bump, it is very easy even in thick-film grinding. It is easy to break, and the problem of cracking of semiconductor wafers is easy to occur at a grinding thickness of 150 μm or less

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