A device for extracting igbt thermally sensitive electrical parameters

A technology for extracting device and electrical parameters, applied in the direction of measuring device, measuring electricity, measuring electrical variables, etc., can solve the problems of chip failure, increased on-state resistance, slow response speed, etc.

Active Publication Date: 2020-01-14
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technologies, such as infrared thermal imaging and thermocouples can solve the problem of junction temperature measurement, but there are disadvantages such as slow response speed and the need to modify the IGBT structure
[0003] The size of the output power will lead to different junction temperatures, and the aging of the IGBT will also affect the junction temperature
With the power cycle of the IGBT, on the one hand, the IGBT is frequently disconnected, and the junction temperature fluctuates between high and low levels. Stress is generated between the IGBT layers due to the difference in thermal expansion coefficient, which eventually causes defects in the package, and the heat dissipation capacity of the IGBT package is reduced. The time the junction temperature increases
On the other hand, the working state of high voltage and high current is likely to cause aging inside the chip, leading to performance degradation, increased on-state resistance and increased switching loss, which further leads to increased power loss, increased chip junction temperature, and positive feedback. Eventually lead to chip failure

Method used

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  • A device for extracting igbt thermally sensitive electrical parameters
  • A device for extracting igbt thermally sensitive electrical parameters
  • A device for extracting igbt thermally sensitive electrical parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] see figure 1 , figure 2 , image 3 and Figure 4 A device for extracting thermally sensitive electrical parameters of an IGBT mainly includes a power circulation system 1, a thermally sensitive electrical parameter extracting system 2, a test station 3, a temperature control system 4, and a measurement, control and protection system 5.

[0050] The circuit structure of the power cycle system 1 is: power cycle power supply control switch S 1 A 1 Terminal series power circulation current source Is.

[0051] The power circulation system 1 and the heat-sensitive electrical parameter extraction system 2 form a series loop.

[0052] Further, the power circulation system 1 and the heat-sensitive electrical parameter extraction system 2 work independently.

[0053]The thermally sensitive electrical parameter extraction system 2 mainly includes a static thermally sensitive electrical parameter extraction subsystem 201 and a dynamic thermally sensitive electrical parameter...

Embodiment 2

[0082] see Figure 5 , the steps for extracting static heat-sensitive electrical parameters of IGBT are as follows:

[0083] 1) According to Figure 1 to Figure 4 As mentioned above, connect the IGBT heat-sensitive electrical parameter extraction device.

[0084] 2) make the test current source control switch S 2 closed, the power cycle power control switch S 1 , the energy storage system control switch S 3 and the energy storage power control switch S 4 Both remain disconnected.

[0085] 3) The signal source 504 outputs a trigger signal to the device under test 301 .

[0086] 4) Collect analog waveform signals of the voltage and current of the device under test 301 through the data acquisition card 501 .

[0087] 5) Using the A / D conversion module 502 to convert the analog waveform signal into a digital waveform signal.

[0088] 6) The processor 503 receives and processes the digital waveform signal. The processor 503 controls the switch S to the power cycle power su...

Embodiment 3

[0090] see Figure 6 , the steps for extracting IGBT dynamic heat-sensitive electrical parameters are as follows:

[0091] 1) According to Figure 1 to Figure 4 As mentioned above, connect the IGBT heat-sensitive electrical parameter extraction device.

[0092] 2) Let the energy storage system control the switch S 3 and the energy storage power control switch S 4 closed, the power cycle power control switch S 1 and the test current source controls the switch S 2 stay disconnected.

[0093] 3) The signal source 504 outputs a trigger signal to the device under test 301 .

[0094] 4) Using the gate control signal of the measurement and control protection system 5 to control the switching off of the power device triode on the test station 5 .

[0095] 5) The data acquisition card 501 collects the transient analog waveform signal of the triode switching process.

[0096] 6) Using the A / D conversion module 502 to convert the analog waveform signal into a digital waveform sig...

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PUM

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Abstract

The invention discloses an IGBT heat sensitive electric parameter extraction device, which mainly comprises a power cycling system, a heat sensitive electric parameter extraction system, a test working position, a temperature control system and a measurement and control protection system, wherein the heat sensitive electric parameter extraction system mainly comprises a static heat sensitive electric parameter extraction subsystem and a dynamic heat sensitive electric parameter extraction subsystem; a to-be-tested device is placed on the test working position; the to-be-tested device outputs analog waveform signals; the measurement and control protection system heats the to-be-tested device through the power cycling system; the measurement and control protection system cools the to-be-tested device through the temperature control system; and the measurement and control protection system measures and extracts heat sensitive electric parameters in the heat sensitive electric parameter extraction system.

Description

technical field [0001] The invention relates to the field of research on switching characteristics of power semiconductor devices, in particular to a device for extracting thermally sensitive electrical parameters of an IGBT. Background technique [0002] With the development of power electronics technology and the improvement of semiconductor manufacturing process, the use of power semiconductor devices is becoming more and more extensive. Especially in high-power and high-frequency application scenarios such as flexible AC-DC transmission and electric locomotive traction, IGBT stands out among many power devices because of its advantages of high withstand voltage, strong current capacity, and fast breaking speed. In applications where high voltage and high current are frequently interrupted, chip overheating becomes one of the main factors for IGBT failure. At the same time, the junction temperature and the fluctuation of the junction temperature are one of the important ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2619
Inventor 姚陈果李孟杰谭坚文董守龙李成祥
Owner CHONGQING UNIV
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