Unlock instant, AI-driven research and patent intelligence for your innovation.

A device for generating standard nonlinear s-parameters

A nonlinear and parametric technology, applied in the field of devices that generate standard nonlinear S-parameters, to solve problems such as inability to measure proficiency testing

Active Publication Date: 2020-08-07
BEIJING INST OF RADIO METROLOGY & MEASUREMENT
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this type of device on a nonlinear network analyzer can only verify the S-parameters of the fundamental frequency signal of the nonlinear network analyzer, but cannot verify its harmonic measurement capability, that is, the nonlinear S-parameter measurement capability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A device for generating standard nonlinear s-parameters
  • A device for generating standard nonlinear s-parameters
  • A device for generating standard nonlinear s-parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0031] It should be understood that the ordinal words first, second, etc. described in the specification are only for clarity of description, and are not intended to limit the order of elements, components or components, that is, described as the first element, component and component, and the second element , component or component may also be expressed as a second element, component and component as well as a first element, component or component.

[0032] figure 1 is a general block diagram of an apparatus 10 for gener...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a standard nonlinear S parameter generation device comprising a radio frequency circuit part and a DC bias circuit part. The radio frequency circuit part comprises a class-C amplifier. A nonlinear S parameter with multiple harmonics is generated based on the class-C amplifier. The DC bias circuit part is used for controlling the amplitude of the generated nonlinear S parameter to maintain constant.

Description

technical field [0001] The present invention relates to the field of semiconductors. More specifically, it relates to an apparatus for generating standard nonlinear S-parameters. Background technique [0002] RF microwave systems are usually composed of active devices and passive devices, and active devices often have nonlinear characteristics, that is, new frequency components are generated. In actual engineering, the amplifier is often pushed to the nonlinear region of its work, and then linearized near an operating point in the nonlinear region. Therefore, it is becoming more and more important to understand the nonlinear characteristics of RF active devices such as power amplifiers and frequency multipliers, and to accurately measure the nonlinear characteristics of devices has become a top priority. [0003] The existing technology can realize the verification of the S parameter index of the linear network analyzer. Linear network analyzers can only measure linear S ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R23/20G01R35/00
CPCG01R23/20G01R35/005G01R35/007
Inventor 陈婷程春悦张娜刘杰高春彦
Owner BEIJING INST OF RADIO METROLOGY & MEASUREMENT