Test key of COA substrate and testing method using test key of COA substrate

Abstract

The invention provides a test key of a COA substrate and a testing method using the test key of the COA substrate. The test key of the COA substrate comprises a first test key, a second test key and athird test key, wherein the first test key comprises a red color resistance pattern, a first via hole pattern formed in the red color resistance pattern and a first metal layer pattern, the second test key comprises a green color resistance pattern, a second via hole pattern formed in the green color resistance pattern and a second metal layer pattern, the third test key comprises a blue color resistance pattern, a third via hole pattern formed in the blue color resistance pattern and a third metal layer pattern, and the first metal layer pattern, the second metal layer pattern and the thirdmetal layer pattern are formed from a same metal layer. The test key of the COA substrate occupies smaller space, and the alignment precision of a color resistance layer relative to a thin film transistor layer and the line width of via holes in the color resistance layer can be simultaneously measured.

Description

technical field [0001] The invention relates to the technical field of liquid crystal displays, in particular to a test key of a COA substrate and a test method using the test key of the COA substrate. Background technique [0002] The COA (Color Filter on Array) substrate of the existing Thin Film Transistor Liquid Crystal Display (TFT-LCD, Thin Film Transistor Liquid Crystal Display) is to manufacture color filters on the thin film transistor array substrate. [0003] At present, the test key for the line width of the via hole in the RGB color-resistive layer and the test key for the alignment accuracy between the RGB color-resistive layer and the thin film transistor layer are independently designed patterns. This design takes up a large space, and the above-mentioned In the two measurements, it is necessary to move the lens of the test device to measure the alignment accuracy of the RGB color-resistive layer and the thin-film transistor layer after the test key of the vi...

AI Technical Summary

Problems solved by technology

[0003] At present, the test key for the line width of the via hole in the RGB color-resistive layer and the test key for the alignment accuracy between the RGB color-resistive layer and the thin film transistor layer are independently designed patterns. This design takes up a large space, and the above-mentioned In the two measurements, it is necessary to move the lens of the test device to measure the alignment accuracy of the RGB color-resistive layer and the thin-film transistor layer after the test key of the via line width of the RGB color-resistive layer, which leads to production beats longer time

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