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Pixel unit, manufacturing method of pixel unit and imaging device

A pixel unit and channel technology, applied in radiation control devices, electrical components, diodes, etc., can solve the problems of reducing the full well capacity of photodiodes, achieve the effects of improving image quality, increasing full well capacity, and suppressing dark current

Inactive Publication Date: 2018-06-29
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When doping is used to prevent dark current, a depletion layer will be generated due to P-type dopant ion implantation, which will reduce the full well capacity of the photodiode.

Method used

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  • Pixel unit, manufacturing method of pixel unit and imaging device
  • Pixel unit, manufacturing method of pixel unit and imaging device
  • Pixel unit, manufacturing method of pixel unit and imaging device

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Embodiment Construction

[0021] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise. In addition, techniques, methods, and devices known to persons of ordinary skill in the related art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the authorized specification.

[0022] In the specification and claims, the words "front", "rear", "top", "bottom", "above", "under", etc., if present, are used for descriptive purposes and not necessarily to describe a constant relative position. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the disclosure ...

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Abstract

The invention relates to a pixel unit, a manufacturing method of the pixel unit and an imaging device. The pixel unit can include a substrate, and the substrate comprises a first part for a photoelectric device and a second part for a transistor coupled with the photoelectric device. The first part comprises a first doped region. The second part comprises a channel forming region adjacent to the first doped region, and a second doped region adjacent to the channel forming region; the conductivity type of the channel forming region is opposite to that of the first doped region. The pixel unit further includes a first insulating layer on the substrate, an adjusting insulating layer arranged on the first insulating layer, and a gate structure above the channel forming region, wherein the first insulating layer covers the first part and at least covers the channel forming region of the second part; the adjusting insulating layer at least covers the portion, above the first part of the first insulating layer and above the channel forming region of the second part.

Description

technical field [0001] The present disclosure relates to a pixel unit, a method of manufacturing the same, and an imaging device. Background technique [0002] Image sensors may be used to sense radiation (eg, optical radiation, including but not limited to visible light, infrared, ultraviolet, etc.) to generate corresponding electronic signals. Image sensors are widely used in digital cameras and other electro-optical devices. [0003] In CMOS image sensor (CMOS Image Sensor, CIS) products, dark current is an important performance parameter. Dark current mainly occurs on the silicon surface and is mainly caused by defects, dangling bonds, dislocations or metal contamination. [0004] At present, there are two main ways to prevent the occurrence of surface dark current. One way is to dope P-type impurities, that is, to do P-type doping on the surface of the photodiode to form a pinned photodiode (PPD). Thereby isolating the silicon surface from the photodiode, thereby pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14643H01L27/14683H01L27/14685
Inventor 陈世杰吴罚黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP