Manufacturing method of source electrode and semiconductor device

Abstract

The present invention relates to a source electrode manufacturing method and a semiconductor device, wherein the source electrode manufacturing method includes forming a plurality of gate structures above a semiconductor substrate, the plurality of gate structures have a first gap and a second gap, and the width of the first gap is less than the width of the second gap in the same direction; sequentially forming a dielectric layer and an etching barrier layer above the gate structure; etching the dielectric layer until the dielectric layer in the first gap is removed, while the second gap is still covered by the dielectric layer and then etching the semiconductor substrate in the first gap to form a second groove, removing the remaining etching barrier layer and dielectric layer; and then performing ion implantation to form a source in the region of the second groove. The manufacturing method of the above source electrode saves the photomask process, which is beneficial to reduce the cost. The present invention also provides a semiconductor device including the source electrode formed by the above method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a source electrode manufacturing method and a semiconductor device. Background technique [0002] With the rapid development of the semiconductor industry, in order to achieve the purpose of improving production efficiency and reducing production costs, the integration density of integrated circuit chips, that is, the number of semiconductor devices interconnected on a chip per unit area, has increased, while the geometric size of semiconductor devices has shrunk. However, this trend also increases the complexity of the manufacturing process of semiconductor devices. For example, in the manufacturing process of semiconductor devices including metal oxide semiconductor field effect transistors (MOSFETs), it usually needs to go through multiple photomask processes (usually including exposure, development, etching, etc.) A series of processes such as etching to pattern a cert...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the source of the existing floating gate flash memory requires a special photomask process, which results in high cost.

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