Unlock instant, AI-driven research and patent intelligence for your innovation.

Test method for storage device

A test method and memory technology, used in static memory, instruments, etc.

Active Publication Date: 2018-08-24
CHANGXIN MEMORY TECH INC
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An embodiment of the present invention provides a method for testing a memory device to solve or alleviate one or more technical problems in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Test method for storage device
  • Test method for storage device
  • Test method for storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] In the following, only certain exemplary embodiments are briefly described. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive.

[0065] In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined.

[0066] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. In...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a test method for a storage device. The test method comprises the following steps: outputting first test data and second test data according to a block selecting signal; entering any one of a first test mode, a second test mode and a third test mode according to a test mode selecting signal, wherein while in the first test mode, part of input and output ports are in a disabled state, and the first test data and the second test data are sequentially output from un-disabled input and output ports; putting part of the input and output ports in the disabled state in a secondtest mode, performing logic processing on first test data and second test data, and outputting the data from un-disabled input and output ports; putting all input and output ports in the un-disabledstate while in the third test mode, and outputting the first test data and the second test data from all input and output ports. According to the technical scheme adopted by the invention, different test modes can be selected, and occupied input and output ports of a test machine table are reduced.

Description

technical field [0001] The present invention relates to the field of semiconductor memory, and in particular, to a testing method of a memory device. Background technique [0002] Semiconductor memory (Semi-Conductor Memory) is a memory that uses semiconductor circuits as storage media, and is composed of semiconductor integrated circuits. figure 1 A circuit diagram of a 16-bit memory device 100 is shown. The memory device 100 includes two 8-bit memory modules 141 and 142. The memory device 100 also includes an instruction logic unit 170 and an address latch 110. The instruction logic unit 170 is connected to an external signal OE. , RAS / , CAS / and WE / output internal control signals, the address latch 130 latches address signals ADD[0:13], and outputs row address signals ROW[0:13] and column address signals COL[ 0:9] to the storage modules 141 and 142, the storage modules 141 and 142 decode the row address signals ROW[0:13] and the column address signals COL[0:9] and outpu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/08G11C29/56
CPCG11C29/08G11C29/56
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC