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Shielded gate trench power device and manufacturing method thereof

A technology for power devices and shielding gates, which is applied to the manufacture of shielded gate trench power devices and the field of shielded gate trench power devices, can solve the problem of high cost

Active Publication Date: 2021-04-02
SHENZHEN SANRISE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with ordinary Trench MOSFETs, manufacturing shielded gate / discrete gate trench MOSFET devices requires more process steps and more photolithography levels, resulting in higher product costs

Method used

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  • Shielded gate trench power device and manufacturing method thereof
  • Shielded gate trench power device and manufacturing method thereof
  • Shielded gate trench power device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 4 example

[0132] Shielded gate trench power device according to the fourth embodiment of the present invention:

[0133] Such as Figure 7 As shown, it is the layout of the shielded gate trench power device of the fourth embodiment of the present invention; the difference between the device of the fourth embodiment of the present invention and the device of the second embodiment of the present invention is:

[0134] Depend on Figure 7 It can be seen that each of the first trenches 201 extends into the terminal region 204 and is isolated from the innermost second trench 201a, so that each of the first trenches 201 has a non-closed structure; that is Figure 7 Each of the first grooves 201 in can no longer communicate with each other through the innermost second groove 201a. Figure 7 with Figure 5 The difference can be simply described as: Figure 7 The structure corresponds to a non-closed groove, and the terminal has multiple right-angle grooves; Figure 5 The structure corresp...

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PUM

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Abstract

The invention discloses a shielding gate groove power device which comprises a device unit area, a gate bus area and a terminal area. A groove of the grid bus area is an extension structure of a groove of the device unit area, a groove of the terminal area encircles the device unit area, and grid structures formed in the grooves of the three areas are the same in technology. In a gate structure ofthe device unit area, a shielding electrode penetrates the whole groove vertically, and a groove gate electrode is positioned in the top two sides of the shielding electrode. The thickness of a fieldoxygen layer formed in the top and side surfaces of the groove is set higher than the width of a contact hole, so that the contact hole corresponding to the gate is positioned in the surface of the groove gate electrode of the gate bus area directly, and further all the field oxygen layer and groove gate electrode of the three areas are obtained by comprehensive back-etching. The invention also discloses a manufacturing method of the shielding gate groove power device. Thus, the photo-etching layers are reduced, and the technical cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a shielded gate trench power device; the invention also relates to a manufacturing method of the shielded gate trench power device. Background technique [0002] Since the invention of power MOS technology, the technology has achieved many important developments and great progress. In recent years, new device structures and new manufacturing processes of power MOS technology have emerged continuously to achieve two basic goals: maximum power handling capability and minimum power loss. Trench gate MOSFET (Trench MOS) technology is one of the most important technical driving forces to achieve this goal. Initially, Trench MOS technology was invented to increase the channel density of planar devices to improve the current handling capability of the device. However, the improved new Trench MOS structure can not only reduce the channel density, but also fu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/06
CPCH01L29/06H01L29/66477H01L29/78H01L2924/3025
Inventor 李东升
Owner SHENZHEN SANRISE TECH CO LTD