Trench gate mosfet with shield gate and manufacturing method thereof
A technology of trench gate and shield gate, which is applied in the manufacture of trench gate MOSFETs and in the field of trench gate MOSFETs, can solve the problems of complex electromagnetic environment and threats to normal operation of switching power supplies
Active Publication Date: 2021-09-14
SHENZHEN SANRISE TECH CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
The increase of switching frequency reduces the size and weight of the switching power supply on the one hand, and on the other hand, it also leads to an increasingly complex electromagnetic environment inside the switching power supply. The resulting electromagnetic interference (EMI) affects the power supply itself and the surrounding electronic equipment. Normal work is a threat
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[0131] The first embodiment of the present invention has a trench gate MOSFET manufacturing method with a shield gate for manufacturing such as image 3 The device of the first embodiment of the present invention shown includes the following steps:
[0132] Step 1: Provide a first conductivity type semiconductor substrate with a first conductivity type epitaxial layer 1 formed on its surface, and use a photolithography process to form a first trench 201 in the first conductivity type epitaxial layer 1; The second groove 201a and the third groove 201b.
[0133] The trench gate MOSFET with a shielded gate includes a device cell area 202, a gate bus area 203, and a terminal area 204; in plan view, the gate bus area 203 is located outside the device cell area 202, and the terminal The region 204 surrounds the device cell region 202 and the gate bus region 203 .
[0134] The device unit region 202 is composed of a plurality of primitive cells arranged periodically, and the gate s...
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Abstract
The invention discloses a trench gate MOSFET with a shielding gate, which comprises: a device unit area, a grid bus area, and a terminal area, and the gate structures formed in the trenches in the three areas have the same process. In the gate structure, the shielding electrode vertically runs through the entire trench, and the trench gate electrodes are on both sides of the top of the shielding electrode. The thickness of the field oxygen layer in the trench is greater than the width of the contact hole, so that the contact hole at the top of the trench gate electrode in the gate bus area directly falls on the surface of the trench gate electrode; at least part of the shielding electrode passes through the top of the gate bus area The contact hole is connected to the gate. The invention also discloses a manufacturing method of the trench gate MOSFET with the shield gate. The invention can improve the EMI performance of the device in application, expand the applicability of the product, reduce the photolithography level and reduce the process cost.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a trench gate MOSFET with a shielding gate; the invention also relates to a manufacturing method of the trench gate MOSFET with a shielding gate. Background technique [0002] Since the invention of power MOS technology, the technology has achieved many important developments and great progress. In recent years, new device structures and new manufacturing processes of power MOS technology have emerged continuously to achieve two basic goals: maximum power handling capability and minimum power loss. Trench gate MOSFET (Trench MOS) technology is one of the most important technical driving forces to achieve this goal. Initially, Trench MOS technology was invented to increase the channel density of planar devices to improve the current handling capability of the device. However, the improved new Trench MOS structure can not only reduce the channel densit...
Claims
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IPC IPC(8): H01L29/78H01L29/423H01L23/552H01L21/336
CPCH01L23/552H01L29/4236H01L29/66666H01L29/7827
Inventor 李东升肖胜安曾大杰
Owner SHENZHEN SANRISE TECH CO LTD