Trench MOSFET with shielding gate and manufacturing method
A trench gate and shielded gate technology is applied in the manufacture of trench gate MOSFETs and in the field of trench gate MOSFETs, which can solve the problems of complex electromagnetic environment of switching power supplies and threats to normal work.
Active Publication Date: 2019-03-05
SHENZHEN SANRISE TECH CO LTD
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- Claims
- Application Information
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Problems solved by technology
The increase of switching frequency reduces the size and weight of the switching power supply on the one hand, and on the other hand, it also leads to an increasingly complex electromagnetic environment inside the switching power supply. The resulting electromagnetic interference (EMI) affects the power supply itself and the surrounding electronic equipment. Normal work is a threat
Method used
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[0131] The first embodiment of the present invention has a trench gate MOSFET manufacturing method with a shield gate for manufacturing such as image 3 The device of the first embodiment of the present invention shown includes the following steps:
[0132] Step 1: Provide a first conductivity type semiconductor substrate with a first conductivity type epitaxial layer 1 formed on its surface, and use a photolithography process to form a first trench 201 in the first conductivity type epitaxial layer 1; The second groove 201a and the third groove 201b.
[0133] The trench gate MOSFET with a shielded gate includes a device cell area 202, a gate bus area 203, and a terminal area 204; in plan view, the gate bus area 203 is located outside the device cell area 202, and the terminal The region 204 surrounds the device cell region 202 and the gate bus region 203 .
[0134] The device unit region 202 is composed of a plurality of primitive cells arranged periodically, and the gate s...
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Abstract
The invention discloses a trench MOSFET with a shielding gate. The trench MOSFET comprises a device unit region, a grid electrode bus area and a terminal area, wherein the grid electrode structures formed in trenches of three areas are the same in process. In the grid electrode structure, a shielding electrode longitudinally penetrates through the whole trench, and trench grid electrodes are located on the two sides of the top of the shielding electrode. The thickness of a field oxide layer in the trench is larger than the width of a contact hole, so that the contact hole in the top of the trench gate electrode of the grid electrode bus area directly falls on the surface of the trench gate electrode; and at least part of the shielding electrode is connected to the grid electrode through the contact hole in the top in the grid electrode bus area. The invention further discloses a manufacturing method of the trench MOSFET with the shielding gate. The EMI performance of the device in application can be improved, and the applicability of the product is expanded; and the photoetching level can be reduced, and the process cost can be lowered.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a trench gate MOSFET with a shielding gate; the invention also relates to a manufacturing method of the trench gate MOSFET with a shielding gate. Background technique [0002] Since the invention of power MOS technology, the technology has achieved many important developments and great progress. In recent years, new device structures and new manufacturing processes of power MOS technology have emerged continuously to achieve two basic goals: maximum power handling capability and minimum power loss. Trench gate MOSFET (Trench MOS) technology is one of the most important technical driving forces to achieve this goal. Initially, Trench MOS technology was invented to increase the channel density of planar devices to improve the current handling capability of the device. However, the improved new Trench MOS structure can not only reduce the channel densit...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/78H01L29/423H01L23/552H01L21/336
CPCH01L23/552H01L29/4236H01L29/66666H01L29/7827
Inventor 李东升肖胜安曾大杰
Owner SHENZHEN SANRISE TECH CO LTD