Method for manufacturing semiconductor device

Abstract

The scheme of the invention provides a method for manufacturing a semiconductor device. The method comprises the steps: alternately and repeatedly stacking insulating layers and sacrificial layers ona substrate to form a stacked structure; sequentially forming a first lower layer and a first photoresist pattern on the stacked structure; employing the first photoresist pattern as an etching mask for etching the first lower layer to form a first lower pattern; employing the first lower pattern as an etching mask for etching a first part of the stacked structure to form a stepped structure. Thefirst lower layer includes a novolak-based organic polymer, and the first photoresist pattern includes a silicon-containing polymer.

Description

technical field [0001] Exemplary embodiments of the inventive concepts relate to semiconductor devices, and more particularly, to methods for manufacturing semiconductor devices. Background technique [0002] Semiconductor devices have been highly integrated and can provide high performance and low cost. The integration density of a semiconductor device can affect the cost of the semiconductor device. The integration density of a two-dimensional (2D) or planar memory device may be mainly determined by the area occupied by a unit memory cell. Therefore, the integration density of a 2D memory device may be affected by a technique for forming fine patterns. However, the manufacturing capability of relatively high-density 2D memory devices may be limited because relatively high-priced equipment may be used to form fine patterns. [0003] Three-dimensional (3D) semiconductor devices including memory cells arranged three-dimensionally have been developed to increase integration...

AI Technical Summary

Problems solved by technology

However, 3D semiconductor memory devices can be relatively expensive and more complex to manufacture than 2D semiconductor memory devices.

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