Transverse varied doped-junction terminal extension composite terminal structure and manufacturing method thereof

Abstract

The invention discloses a transverse varied doped-junction terminal extension composite terminal structure. Taking GCT for example, a shared n-substrate, and an n type FS layer, a p+ positive electrode region and a positive electrode below the substrate are arranged in a terminal region and an active region; a resistor region, a transverse varied doped region and a junction terminal extension region are arranged on the outer side of an active region main junction in sequence; the transverse varied doped region and the junction terminal extension region are overlapped mutually, and the surfaceof the terminal region is covered with two layers of passivation films; and the main junction and the composite terminal region are connected into an integrated body by the resistor region. The invention also discloses a manufacturing method of the transverse varied doped-junction terminal extension composite terminal structure. The composite terminal structure disclosed in the invention not onlycan obtain withstand voltage efficiency of about 91%, low high-temperature electric leakage and high terminal stability, but also can be compatible with the active region in the terms of the manufacturing process, so that process difficulty and cost are not increased in the device preparation process; and the method is applicable to deep junction devices of a square chip or a circular chip.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a lateral variable doping-junction terminal extension compound terminal structure, and also relates to a manufacturing method of the lateral variable doping-junction terminal extension compound terminal structure. Background technique [0002] Junction termination technology is a key problem that must be solved in the manufacture of power semiconductor devices. The termination structure used will directly affect the withstand voltage and stability of the device. For high-voltage devices, such as thyristors, gate turn-off thyristors (GTO) and gate commutated thyristors (GCT), etc., the p-base region is relatively deep. In order to improve the terminal breakdown voltage, mechanical grinding and corrosion are usually used to form mesa terminals. The structure and manufacturing process are relatively mature, but its withstand voltage efficiency is only 80%, and the ...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a lateral variable doping-junction terminal extension composite terminal structure, which solves the problems of low voltage resistance efficiency, high temperature leakage current, poor stability and low reliability of deep junction device terminals in the prior art

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