A lateral variable doping-junction terminal extension compound terminal structure and its manufacturing method
A junction terminal extension and composite terminal technology is applied to a lateral variable doping-junction terminal extension composite terminal structure. High temperature leakage current and other problems
Active Publication Date: 2021-06-15
XIAN UNIV OF TECH
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Problems solved by technology
[0004] The purpose of the present invention is to provide a lateral variable doping-junction terminal extension composite terminal structure, which solves the problems of low voltage resistance efficiency, high temperature leakage current, poor stability and low reliability of deep junction device terminals in the prior art
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[0025] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
[0026] The pressure mechanism of the laterally doped-finite end extending composite terminal structure of the present invention is to provide the composite terminal by providing a finite end extension (JTE region) overlapping in the lateral doped region (VLD region). The doping concentration of the end of the region increases, the radius of curvature becomes large, not only reduces the electric field strength of the terminal region surface, improves the end breakdown voltage, but also suppresses the impact of charge in the terminal region passivation film on its surface, improve the stability of the pressure. Sex. By setting a resistive region between the primary and the composite terminal region, the current concentration at the edge of the active region can be effectively alleviated, thereby increasing the reliability of the terminal.
[0027] Re...
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Abstract
The invention discloses a laterally variable doping-junction terminal extension composite terminal structure. Taking GCT as an example, the terminal area and the active area have a common n-substrate and the n-type FS layer below it, p+ anode area and anode Electrode; outside the main junction of the active region, a resistance region, a lateral variable doping region and a junction terminal extension region are arranged in sequence, and the lateral variable doping region and the junction terminal extension region overlap each other, and the surface of the terminal region Covered with two passivation films; the resistive region connects the main junction and the composite termination region as one. The invention also discloses a manufacturing method of the lateral variable doping-junction terminal extension composite terminal structure. The composite terminal structure of the present invention can not only obtain about 91% withstand voltage efficiency, low high-temperature leakage current, and high terminal stability, but also the manufacturing process is fully compatible with the active region, and will not increase the process difficulty and cost in the device manufacturing process , whether it is a deep junction device with a square chip or a circular chip, it is applicable.
Description
Technical field [0001] The present invention belongs to the technical field of power semiconductor device, and it is directed to a transverse-doped-finger end extending composite terminal structure, and the present invention also relates to a method of manufacturing the transverse doped-finger end extending composite terminal structure. Background technique [0002] Final technology is a key issue that must be solved in the manufacturing of power semiconductor devices, and the terminal structure used directly affects the pressure and stability of the device. For high pressure devices, such as a cryogenic tube, gate can turn off the thyristor (GTO) and door shift thyristor (GCT), and the P-based region is deep, in order to improve the end breakdown voltage, the mechanical corrosion angle and corrosion form a countertop terminal The structure, the production process is mature, but its withstand voltage efficiency is only 80%, and the terminal region is large, and the high temperatu...
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IPC IPC(8): H01L29/06H01L29/417H01L29/66H01L29/74H01L21/332
CPCH01L29/0615H01L29/0684H01L29/41716H01L29/66393H01L29/7436
Inventor 王彩琳刘聪张琦
Owner XIAN UNIV OF TECH