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Method and apparatus for programming programmable resistive memory element

A technology for resistive storage and storage cells, which is applied in the field of improving storage cell data state preservation, and can solve problems such as short-term storage and unsustainable storage cells.

Active Publication Date: 2018-10-02
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, it has been found that some of the memory cells in the array do not remain in the SET or RESET resistance range after programming and verifying, and sometimes, this may be for a relatively short time, after the verifying step The programmable material can undergo a change such that the memory cell has a resistance outside the target range

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  • Method and apparatus for programming programmable resistive memory element
  • Method and apparatus for programming programmable resistive memory element
  • Method and apparatus for programming programmable resistive memory element

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Embodiment Construction

[0057] Programmable resistance memory cells can have resistance programmed in any one of two or more resistance ranges, each range corresponding to a data state. For simplicity, this application will describe a programmable element with two resistance ranges, however it should be understood that more resistance ranges are possible.

[0058] In order to distinguish the data state of the memory cell, the resistance window must be maintained between low resistance (or set (SET) range) and high resistance (or reset (RESET) range), this interval provides the sensing margin of the memory (sensing margin) . When the resistance of the programmable element of the memory cell changes from a set (SET) or reset (RESET) range to an intermediate state, the width of the resistance window will decrease, and the data state of the memory cell will be more difficult to distinguish.

[0059] In many memory arrays, the memory cells comprise programmable elements with programmable resistance, the ...

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Abstract

A method for programming a programmable resistive memory unit includes performing one or more iterations til. verification passes. Such iterations include: a) applying a programming pulse to the memory cell; and b) verifying that the resistance of the memory cell is in a target resistance range after application of the programming pulse. After iteration of verified pass of the one or more iterations, c) applying a stabilized pulse to the memory cell, the stabilized pulse having the same polarity as the programming pulse applied to the memory cell. After applying the stabilized pulse, the second verification determines if the resistance of the programmable element is within the target resistance range. The iterations comprising steps a), b), c), and d) are performed till the second pass. Methods and apparatus are described to program a plurality of such memory cells, including stabilized pulses of the same polarity are applied after programming.

Description

technical field [0001] The invention relates to a method for improving data state preservation of a storage unit, the storage unit includes a programmable element including a programmable resistance. Background technique [0002] Programmable resistance non-volatile memory uses storage materials such as metal oxide materials, through the application of electrical pulses of multiple levels suitable for implementation in integrated circuits, the resistance of this material will be between two or Varying between multiple stable resistance ranges. The two or more resistance ranges correspond to data states. Access lines such as bit lines and word lines coupled to memory cells are connected to circuits to perform programming operations such as set (SET) and reset (RESET) operations, which cause programmable elements to switch between low and high between the resistance ranges. [0003] Such as figure 1 As shown, one known method for programming the memory cell is through incr...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0069G11C2013/0092A61K8/23A61K8/34A61K8/347A61K8/36A61K8/361A61K8/416A61K8/42A61K8/44A61K8/4926A61K8/4953A61K2800/30A61K2800/524A61Q15/00A61K8/26A61K2800/5922
Inventor 许凯捷李峰旻林昱佑
Owner MACRONIX INT CO LTD