Bonding pad structure

Abstract

The invention provides a bonding pad structure. The bonding pad structure comprises a contact structure and a bonding pad layer which is arranged on the contact structure so as to realize electrical connection, wherein the contact structure comprises a plurality of contact units arranged at intervals; at least one of the contact units is integrally formed with another contact unit so as to form acontact unit with increased projection area on the bonding pad layer; or, at least one of the contact units is longitudinally divided into N parts, the N parts are integrally formed with the N contactunits so as to form the N contact units with increased projection area on the bonding pad layer, and N is greater than or equal to 2. According to the bonding pad structure, due to the fact that thetotal area of the projection, on the bonding pad layer, of the contact structure does not change, so that the current density does not change under larger current, and the fusion of the contact structure cannot be caused; and moreover, the total area of the side wall of the contact structure can be reduced by reducing the quantity of the contact structures, and then the damage effect of plasma isreduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a bonding pad structure. Background technique [0002] For the VLSI manufacturing industry, with the continuous reduction in the size of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices, the semiconductor manufacturing process has entered the era of deep submicron, and is developing towards ultra-deep submicron. At this time, The reliability of semiconductor devices directly affects the performance and service life of IC chips produced. [0003] In the manufacturing process of semiconductor devices, many process steps such as dry etching, ion implantation, and chemical vapor deposition use plasma. In theory, the plasma is electrically neutral to the outside, that is, positive and negative ions The numbers are equal. But in fact, the positive ions and negative ions entering the local area of ​​the wafer are not equal, which leads to the generatio...

AI Technical Summary

Problems solved by technology

However, as the size of the through hole becomes larger, PID will damage the device under the pad, which will reduce the performance and yield of the device, or even fail

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