Thin film transistor and manufacturing method thereof, an array substrate and display device

Abstract

The embodiment of the invention discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, which relate to the technical field of display and are used for improving the manufacturing accuracy of a TFT channel. The thin film transistor comprises a source-drain electrode. The source-drain electrode comprises a metal substrate and a dense conductivelayer covering the metal substrate, and the compactness of the dense conductive layer is greater than that of the metal substrate. The manufacturing method comprises the following steps: providing a substrate, on which an active layer of the thin film transistor is formed; making the metal substrate and the dense conductive layer sequentially settle on the surface, opposite to the substrate, of the active layer, wherein the compactness of the dense conductive layer is greater than that of the metal substrate; and conducting photoetching on the dense conductive layer and the metal substrate inorder and then forming a source-drain electrode of the thin film transistor by means of the metal substrate and the dense conductive layer that have undergone photoetching. The embodiment of the invention is applicable to thin film transistors with a narrow channel.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] In recent years, a display panel using a Thin Film Transistor (TFT for short) as a driving switch corresponding to a pixel unit, that is, a TFT display panel, has been widely used in display devices such as mobile phones and computers. Moreover, in order to provide users with high-quality visual enjoyment, TFT display panels are increasingly pursuing high resolution and high aperture ratio, making TFT narrow channel has become one of the mainstream development trends of TFT. [0003] However, since the width dimension of the TFT channel is generally related to the source and drain of the TFT, that is, the width of the TFT channel is usually expressed as the distance between the source and the drain in the source and drain, and the source and drain of...

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Problems solved by technology

[0004] However, at present, when the metal layer is etched by a photomask process to form the source and drain of TFTs, large critical dimension (Critical Dimension, referred to as CD) deviations are prone to occur, for example, the unilateral CD deviation of the source and drain of TFTs is not If it is less than 0.6 μm, the width of the corresponding TFT channel will be at least 1.2 μm larger than the expected width, which will easily lead to low manufacturing accuracy of the TFT channel, which is not conducive to the realization of TFT narrow channel

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