Exposure apparatus and exposure method

Abstract

Embodiments of the present invention provide an exposure apparatus and an exposure method, and relates to the field of substrate manufacture, wherein performance indexes of the product can not be affected in the case of effective reduction of CD deviation. The exposure apparatus comprises: an exposure light source, a compound eye system, an optical system, and two diaphragms, wherein the two diaphragms are arranged on one side of the incidence surface or the exiting surface of the compound eye system, and are symmetrically arranged relative to the center of the compound eye system, and the opening orientation of the two diaphragms are adjusted according to the critical dimension CD orientation of a member requiring exposure.

Description

technical field

[0001] The invention relates to the field of substrate manufacturing, in particular to an exposure device and an exposure method. Background technique

[0002] In the existing substrate manufacturing process, the completion of a pattern on the substrate requires processes such as photoresist coating, exposure, development, and etching. During exposure, the ultraviolet light incident on the mask is passed through the optical system of the exposure device. After processing the non-ideal collimated light, the divergence angle of the paraxial ray is the smallest, and when it is projected near the exposure plane, it is the closest to the ideal parallel light, while the divergence angle of the marginal ray is the largest. The divergence angle of the edge light will expand the exposure range of the photoresist, so that there is a certain deviation between the finally formed photoresist pattern size and the pattern size on the mask plate.

[0003] In order to ensure...

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