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High-voltage semiconductor element with single-pulse avalanche energy and its manufacturing method

A semiconductor, single-pulse technology, used in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., to solve problems such as energy loss

Active Publication Date: 2020-08-14
LEADTREND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under such a detection framework, the flowing current I D All must flow through sense resistor RCS1
For relatively large flow currents I D In terms of the sense resistor RCS1 will produce a considerable energy loss

Method used

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  • High-voltage semiconductor element with single-pulse avalanche energy and its manufacturing method
  • High-voltage semiconductor element with single-pulse avalanche energy and its manufacturing method
  • High-voltage semiconductor element with single-pulse avalanche energy and its manufacturing method

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Embodiment Construction

[0070] In this specification, there are some same symbols, which represent elements with the same or similar structure, function, and principle, and those with general knowledge in the industry can infer based on the teaching of this specification. For the sake of brevity in the description, elements with the same symbols will not be repeated.

[0071] figure 2 show Figure 1B A top view of the high voltage MOSFET 12 in , which is formed on a semiconductor chip. A front side of the semiconductor chip has a gate 18 , a source 14 and a detection terminal 16 , which can be used as the gate terminal G, the source terminal S and the detection terminal CS of the high voltage MOSFET 12 respectively. A backside (not shown) of the semiconductor chip has a drain, which can be used as the drain terminal D of the high voltage MOSFET 12 .

[0072] image 3 example show figure 2 A top view of the middle area 20. Figure 4 for along figure 2 A cross-sectional view of line IV-IV in ...

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PUM

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Abstract

The invention discloses a high-voltage semiconductor element and a manufacturing method thereof. The high-voltage semiconductor element has good single-pulse avalanche energy. The high-voltage semiconductor component includes a main high-voltage switching component and a current detection component. The main high-voltage switching element includes several switch units arranged in a first matrix. Each switch unit has a switch unit width. The current detection element includes several detection units arranged in a second matrix. Each detection unit has a detection unit width that is larger than the switch unit width.

Description

technical field [0001] The invention relates to a high-voltage metal-oxide-semiconductor transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET), especially a high-voltage MOSFET integrated with a current detection element. Background technique [0002] A high-voltage MOSFET is a semiconductor element, and generally refers to a MOSFET that can withstand a drain-to-source voltage of more than 5V. In application, it can be used to switch loads, or to switch between different voltage potentials in power management, or as a power element in a high-power amplifier. [0003] High voltage MOSFETs are often required to operate at high currents. Figure 1A Shows an existing current-sensing architecture. The source terminal S of the high-voltage MOSFET 10 is directly connected to a sense resistor RCS1, which is across the voltage V CS Can faithfully reflect the flow current I D , Provided to other circuits for corresponding control. However, under such a detection f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L21/822
CPCH01L21/822H01L27/088
Inventor 曾婉雯叶人豪凃宜融熊志文
Owner LEADTREND TECH