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A process control method

A technology of process control and process, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as control parameter drift, and achieve the effect of avoiding control parameter drift

Active Publication Date: 2020-11-13
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0005] The purpose of the present invention is to provide a process control method to solve the problem of control parameter drift in the existing semiconductor process

Method used

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Embodiment Construction

[0024] The process control method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structures. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0025] Such as figure 1 As shown, the embodiment of the present invention provides a process control method.

[0026] First, step S101 is performed: process a wafer with a specific process, and collect real-time data on at least one related process parameter of the processed wafer, and analyze the collected data through the existing APC system to form the Basic control parameters for a pa...

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Abstract

The invention provides a technology control method. According to the technology control method, a measurement influence factor is increased on the basis of control parameters provided by an existing APC (Advanced Process Control) system and specific technological processing is carried out a measurement standard sheet; different measurement machines are used for measuring a plurality of size valuesobtained by a technological size of the measurement standard sheet respectively; the difference between one of the plurality of size values and one standard value is used as the measurement influencefactor to be increased into existing control parameters to form standard control parameters; wafers of the next batch are controlled through standard control parameters to be subjected to a specifictechnology, so as to avoid conditions that control parameter drift is caused by errors in the measurement of the technological size of the wafers of the former batch and the wafers of the next batch are reworked even scraped.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process control method. Background technique [0002] With the continuous enhancement of the function and performance of integrated circuit chips and the continuous reduction of the feature size of semiconductor devices, the investment cost of integrated circuit production lines has become very high, so the precise control of semiconductor processes is particularly important, especially for different batches of semiconductors. Run-to-Run (R2R) control of the device. The previous statistical process control (Statistical Process Control, referred to as SPC) and a single control method for a parameter can no longer meet the current technical requirements. In order to improve the production efficiency of equipment, make the process line have extensibility and flexibility, and improve product quality and continuity, semiconductor advanced process control (APC) h...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/20
Inventor 吴晓彤聂钰节
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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