GaN nano column grown epitaxially on silicon/graphene composite substrate and preparation method thereof

A graphene composite and epitaxial growth technology, applied in the field of GaN nanopillars, can solve the problems of uneven distribution of GaN nanopillars, uneven diameter and length, large lattice mismatch, etc., to promote low defect density, growth and manufacturing process. Effects of mature, low defect density

Inactive Publication Date: 2018-12-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large lattice mismatch between Si and GaN; at the same time, the distribution of GaN nanocolumns is uneven in the early stage of growth, and the difference in the distribution of Ga and N atoms during the growth process leads to the growth of GaN nanocolumns with different heights and diameters. Uniformity, poor order, etc.

Method used

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  • GaN nano column grown epitaxially on silicon/graphene composite substrate and preparation method thereof
  • GaN nano column grown epitaxially on silicon/graphene composite substrate and preparation method thereof
  • GaN nano column grown epitaxially on silicon/graphene composite substrate and preparation method thereof

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Embodiment 1

[0047] (1) Si substrate and the selection of its crystal orientation: using an ordinary commercial Si substrate, with the (111) plane as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the (111) plane of Si, That is, GaN(0001) / / Si(111), which helps to epitaxially grow high-quality GaN nanopillars;

[0048] (2) Surface polishing of Si substrate: Polish the surface of the Si substrate with diamond slurry, observe the surface of the substrate with an optical microscope until there are no scratches, and then use chemical mechanical polishing for polishing;

[0049] (3) Si substrate cleaning: use a mixture of HF and deionized water with a volume ratio of 1:10 to perform standard ultrasonic cleaning on the substrate for 1 minute, then repeatedly rinse with deionized water for 1 minute, and finally blow with high-purity dry nitrogen dry;

[0050] (4) Preparation of Si / graphene composite substrate: Cut the 3 layers of graphene g...

Embodiment 2

[0055] (1) Si substrate and the selection of its crystal orientation: using an ordinary commercial Si substrate, with the (111) plane as the epitaxial plane, the crystal epitaxial orientation relationship is: the (0001) plane of GaN is parallel to the (111) plane of Si, That is, GaN(0001) / / Si(111), which helps to epitaxially grow high-quality GaN nanopillars;

[0056] (2) Surface polishing of Si substrate: Polish the surface of the Si substrate with diamond slurry, observe the surface of the substrate with an optical microscope until there are no scratches, and then use chemical mechanical polishing for polishing.

[0057] (3) Si substrate cleaning: use a mixture of HF and deionized water with a volume ratio of 1:10 to perform standard ultrasonic cleaning on the substrate for 1 minute, then repeatedly rinse with deionized water for 1 minute, and finally blow with high-purity dry nitrogen dry.

[0058] (4) Preparation of Si / graphene composite substrate: Place the Si substrate in a ch...

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Abstract

The invention belongs to the technical field of semiconductors, and discloses a GaN nano column epitaxially grown on a silicon / graphene composite substrate and a preparation method thereof. The methods are: (1) cleaning the Si substrate; (2) preparing a graphene layer on a Si substrate; (3) GaN nanoparticles are grown on graphene of Si substrate by molecular beam epitaxy at 900 - 1100 DEG C; (4) Molecular beam epitaxy is used to grow the GaN nanoparticles in step (3) at low temperature of 650-800 DEG C. GaN nano-pillar are epitaxially grown on a silicon / graphene composite substrate, and that GaN nano-pillars comprise a Si substrate, a graphene layer and a GaN nano-pillar in order from bottom to top. The GaN nano-pillar of the invention has uniform diameter, high ordering, low defect density and high crystal quality, and can improve the carrier radiation recombination efficiency of the device, the luminescence efficiency of the nitride device and the hydrogen production efficiency by photodecomposition of water. The preparation method of the invention is simple and the production cycle is short.

Description

Technical field [0001] The invention relates to a GaN nano-column, in particular to a GaN nano-column grown on a Si / graphene composite substrate and a preparation method thereof. Background technique [0002] GaN and III-nitrides are widely used in light-emitting diodes (LED), lasers and optoelectronic devices due to their advantages such as large band gap, stable physical and chemical properties, high thermal conductivity and high electron saturation speed. Compared with other wide-bandgap semiconductor materials, GaN materials have the above advantages, and their nano-scale GaN materials also show more novel characteristics in terms of quantum effects, interface effects, volume effects, and size effects. [0003] GaN nanomaterials have produced a series of novel characteristics due to the "size effect", making it a huge prospect in basic physical sciences and new technology applications, and has become a current research focus. The GaN nanopillar structure has shown more excelle...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/02H01L31/0304H01L33/32H01S5/30
Inventor李国强高芳亮余粤锋徐珍珠
OwnerSOUTH CHINA UNIV OF TECH