Thermal impedance measurement system and method for power semiconductor devices

Abstract

The invention provides a thermal impedance measurement system and method for a power semiconductor device. The system comprises a direct-current power supply module, a tested module, a driving module,a measurement module and a master control module, wherein the direct-current power supply module is used for providing electric energy for the tested module; the tested module comprises at least onetested unit; the driving module is used for carrying out power amplification on a switch state signal output by the master control module to drive a power device in the tested unit; the measurement module is used for detecting electrical state and temperature state of the tested module; and the master control module is used for performing analysis processing on a result measured by the measurementmodule to obtain a thermal impedance characteristic of the power semiconductor device in the tested unit. According to the thermal impedance measurement system and method, the thermal impedance characteristics of a plurality of power semiconductor devices can be measured more accurately, so that the cost of a test system is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a thermal impedance measurement system and method of a power semiconductor device. Background technique [0002] Power semiconductor devices are important components in power electronic converters, and the abnormal operation of power semiconductor devices is the main cause of converter failures. In order to improve the reliability and economy of the converter, it is necessary to accurately predict and evaluate the thermal behavior and work efficiency of the power semiconductor device. Before this, the thermal impedance characteristics of the power semiconductor device must be accurately obtained. [0003] According to the definition formula of thermal impedance, to obtain the thermal impedance characteristics of power semiconductor devices, it is necessary to obtain the dynamic temperature change of the device under test and the power loss of the device. The existing t...

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Problems solved by technology

This also makes the thermal impedance test method of traditional power semiconductor devices have significant problems such as high test system cost, slow heating current change speed, single heating current direction, fixed device under test, and inconsistency between the working state of the device and the actual application.

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