Flexible organic non-volatile memory device with low-voltage high-speed erasing and writing and preparation method thereof

Abstract

The invention provides a low-voltage high-speed erasable flexible organic non-volatile storage device and a preparation method thereof. The storage device includes a substrate, a bottom electrode, an insulating layer, a storage layer, an active layer and a substrate sequentially stacked on the substrate. Source and drain electrodes, the storage layer is poly-α-methylstyrene. The present invention utilizes poly-α-methylstyrene organic polymer as the storage layer, because poly-α-methylstyrene has very high surface smoothness and good memory effect, and can provide a good foundation for the growth of the active layer, thereby Improve the carrier mobility of the active layer, effectively improve the retention and fatigue resistance of the storage device, and realize low-voltage high-speed erasing and writing.

Description

technical field [0001] The invention belongs to the technical field of flexible organic electronics, and in particular relates to a low-voltage high-speed erasable flexible organic non-volatile storage device and a preparation method thereof. Background technique [0002] Flexible organic electronics are organic material electronics fabricated on flexible / stretchable substrates. Compared with traditional silicon-based electronic devices, flexible organic electronic devices have the advantages of light weight, low-temperature integration, flexibility and large-area manufacturing of arbitrary shapes, and have broad application prospects in information, energy, medical, national defense and other fields, such as flexible Organic non-volatile memory, organic field-effect transistors, organic solar cells, sensors, organic light-emitting diodes, etc. [0003] Among them, the flexible organic non-volatile memory device is to insert a storage layer between the insulating layer and ...

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Problems solved by technology

[0004] In the prior art, methods such as electron beam evaporation and pulsed laser are commonly used to prepare metal oxide thin films as the storage layer of flexible organic non-volatile memory devices. The preparation method is complicated, and the metal oxide thin film still has poor stability and low operating voltage Therefore, finding new materials to replace metal oxide thin film storage layers is an important direction for the development of flexible organic non-volatile storage devices.

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