Photomask inspection method, photomask manufacturing method, and photomask inspection apparatus
An inspection method and an inspection device technology, which are applied in the field of measuring the phase shift of a photomask, and can solve problems such as inability to accurately grasp the phase shift effect
Inactive Publication Date: 2019-02-05
HOYA CORP
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Problems solved by technology
Therefore, there may be a difference between the phase shift amount of the monitor pattern portion provided near the outer edge of the substrate and the phase shift amount inside the transfer pattern, and thus the phase shift generated during pattern transfer cannot be accurately grasped. The inconvenience of the effect
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[0080]
[0081] Generally, in the manufacturing process of the phase shift mask, the phase shift amount of the phase shift part with respect to the wavelength included in the exposure light is approximately 180 degrees (for example, 170 degrees to 190 degrees), and the mask to be used is selected. The composition and film thickness of the phase shift film. However, it is preferable to measure the amount of phase shift in order to check whether there is a change in the amount of phase shift or whether a desired specific amount of phase shift is achieved during or after manufacturing.
[0082] figure 1 A photomask (also referred to as a test mask) to be a test object is exemplified. figure 1 (a) represents the situation of looking down, figure 1 (b) shows a cross section. The mask 1 to be inspected is called a so-called halftone type phase shift mask. This mask to be inspected (phase shift mask) 1 surrounds a hole pattern constituted by light-transmitting portions 2 , and ...
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Abstract
A photomask inspection method, a photomask manufacturing method, and a photomask inspection apparatus can easily and directly measure the amount of phase shift of the phase shifting portion included in the transfer pattern of the photomask. The photomask inspection method measures the phase characteristics of the phase shift portion included in the transfer pattern of the photomask, and includes astep of providing a photomask in an inspection apparatus including a projection optical system, and an optical image data acquisition step of exposing the provided photomask and projecting the optical image of the phase shifting portion onto the imaging surface to obtain optical image data; and a calculation step of calculating the phase shift amount of the phase shifting portion using the acquired optical image data, in the optical image data acquisition step, optical image data in each of a plurality of in-focus states is obtained by moving at least a part of the photomask, the projection optical system, and the imaging surface in the optical axis direction. In the calculation step, the phase shift amount is obtained using the acquired optical image data of a plurality of in-focus states.
Description
technical field [0001] The present invention relates to the inspection of photomasks used in the manufacture of electronic devices, and in particular, to the inspection of photomasks suitable for use in the manufacture of display devices. In particular, the present invention relates to a method and an apparatus for measuring the amount of phase shift of a photomask (phase shift mask) having a pattern for transfer utilizing a phase shift effect. Background technique [0002] Phase shift masks are mainly used as photomasks for semiconductor device manufacturing because they are superior in transfer performance, especially depth of focus, and contrast compared to binary masks. And, an inspection method for inspecting the phase shift amount of the pattern of these phase shift masks has been proposed. [0003] Patent Document 1 describes a phase inspection method for measuring a phase shift caused by a semitransparent phase shift film formed on an exposure mask. This phase insp...
Claims
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IPC IPC(8): G03F1/26G03F1/84
CPCG03F1/26G03F1/84G03F1/82G03F7/70275G03F7/70508G03F7/70641G03F7/70958
Inventor 剑持大介
Owner HOYA CORP