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Plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as uneven temperature distribution, and achieve the effect of reducing and suppressing the in-plane uniformity

Active Publication Date: 2019-02-26
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the temperature distribution in the circumferential direction of the object to be processed tends to be uneven.

Method used

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  • Plasma processing apparatus
  • Plasma processing apparatus
  • Plasma processing apparatus

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Embodiment Construction

[0050] Hereinafter, embodiments of the plasma processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same or equivalent part in each drawing. In addition, the present invention is not limited to the disclosure content of the present embodiment. The respective embodiments can be appropriately combined within a range that does not conflict with processing contents.

[0051] [Structure of plasma processing apparatus]

[0052] First, a schematic configuration of plasma processing apparatus 10 according to the embodiment will be described. figure 1 It is a schematic cross-sectional view showing an example of a schematic configuration of the plasma processing apparatus according to the embodiment. The plasma processing apparatus 10 is configured airtight, and has a processing container 1 set at an electric ground potential. The processing container 1 is c...

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Abstract

The invention provides a plasma processing apparatus. A first placing table (2) includes a first member (20), a sheet member (21), and a second member (22). The first member (20) includes a recessed portion (24) in a range corresponding to a placing surface (2a) on a back surface side with respect to the placing surface (2a) on which a wafer is placed. The sheet member is formed in a sheet shape,includes a heater (21c) and a lead wiring (21d) that supplies power to the heater (21c), and disposed in the recessed portion such that the heater (21) is positioned in a region corresponding to a placing surface (2a) inside the recessed portion (24) and the lead wiring (21d) is positioned on a side surface of the recessed portion (24). The second member is fitted into the recessed portion (24) inwhich the sheet member (21) is disposed. Therefore, it is possible to suppress the decrease in in-plane uniformity of plasma processing on a workpiece.

Description

technical field [0001] Various aspects and embodiments of the invention relate to plasma processing apparatus. Background technique [0002] Conventionally, there is known a plasma processing apparatus that performs plasma processing such as etching on an object to be processed such as a semiconductor wafer using plasma. In such a plasma processing apparatus, in order to control the temperature of the object to be processed with high precision, a heating element for temperature adjustment is embedded in a mounting table on which the object to be processed is placed. The heating element needs to be supplied with electricity. Therefore, in the plasma processing apparatus, a power supply terminal is provided in the outer peripheral region of the mounting table, and electric power is supplied from the power supply terminal to the heating element (see, for example, Patent Document 1 below). [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Ja...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32724H01J37/32642H01L21/67069H01J2237/2001H01J2237/334H01J2237/002H01L21/67103H01L21/67109H01L21/68735
Inventor 小泉克之高桥雅典
Owner TOKYO ELECTRON LTD
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