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Plasma treatment device

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as uneven temperature distribution, and achieve the effect of reducing and suppressing in-plane uniformity

Active Publication Date: 2021-05-14
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the temperature distribution in the circumferential direction of the object to be processed tends to be uneven.

Method used

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Embodiment Construction

[0050] Hereinafter, embodiments of the plasma processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same or equivalent part in each drawing. In addition, the present invention is not limited to the disclosure content of the present embodiment. The respective embodiments can be appropriately combined within a range that does not conflict with processing contents.

[0051] [Structure of plasma processing apparatus]

[0052] First, a schematic configuration of plasma processing apparatus 10 according to the embodiment will be described. figure 1 It is a schematic cross-sectional view showing an example of a schematic configuration of the plasma processing apparatus according to the embodiment. The plasma processing apparatus 10 is configured airtight, and has a processing container 1 set at an electric ground potential. The processing container 1 is c...

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Abstract

The invention provides a plasma processing device, wherein a first mounting table (2) is composed of a first component (20), a sheet component (21) and a second component (22). The first member (20) has a concave portion (24) formed in a range corresponding to the mounting surface (2a) on the back side opposite to the mounting surface (2a) on which the wafer (W) is mounted. The sheet member (21) is formed in a sheet shape, and is provided with a heating element (21c) and a lead wire (21d) for supplying electric power to the heating element (21c). The sheet member (21) is disposed in the recess (24) in such a manner that the heating element (21c) is located in a region corresponding to the mounting surface (2a) inside the recess (24), and the lead wiring (21d) is located on the side surface of the recess (24). )Inside. The second member (22) fits into the recess (24) where the sheet member (21) is arranged. Accordingly, it is possible to suppress a decrease in the in-plane uniformity of the plasma treatment performed on the object to be processed.

Description

technical field [0001] Various aspects and embodiments of the invention relate to plasma processing apparatus. Background technique [0002] Conventionally, there is known a plasma processing apparatus that performs plasma processing such as etching on an object to be processed such as a semiconductor wafer using plasma. In such a plasma processing apparatus, in order to control the temperature of the object to be processed with high precision, a heating element for temperature adjustment is embedded in a mounting table on which the object to be processed is placed. The heating element needs to be supplied with electricity. Therefore, in the plasma processing apparatus, a power supply terminal is provided in the outer peripheral region of the mounting table, and electric power is supplied from the power supply terminal to the heating element (see, for example, Patent Document 1 below). [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Ja...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32724H01J37/32642H01L21/67069H01J2237/2001H01J2237/334H01J2237/002H01L21/67103H01L21/67109H01L21/68735
Inventor 小泉克之高桥雅典
Owner TOKYO ELECTRON LTD
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