Substrate heating device and substrate heating method

A heating device and heating method technology, applied in the direction of lighting and heating equipment, furnaces, instruments, etc., to achieve the effects of suppressing the reduction of uniformity in the plane, preventing sublimation pollution, and suppressing changes

Active Publication Date: 2019-12-10
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these devices cannot solve the above-mentioned problems

Method used

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  • Substrate heating device and substrate heating method
  • Substrate heating device and substrate heating method
  • Substrate heating device and substrate heating method

Examples

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Embodiment Construction

[0055] refer to figure 1 The schematic configuration diagram of FIG. 10 illustrates a wafer W heating apparatus 1 according to an embodiment of the present invention. The heating device 1 heats the wafer W whose surface is coated with a chemical solution on the outside of the heating device 1 . In this example, the diameter of the wafer W is 300 mm. In addition, the chemical solution contains a relatively low molecular weight polymer (low molecular weight polymer) and a cross-linking agent, for example, by heating to 250°C, the cross-linking reaction of the above-mentioned polymer occurs to form a so-called chemical compound containing carbon as a main component. Organic film of SOC film. The content of carbon in the organic film is, for example, 90% or more. In addition, after heat treatment by the heating device 1 on the organic film, a film containing silicon oxide called an SOG film and a resist film are sequentially laminated outside the heating device 1 . The pattern...

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Abstract

The invention provides a substrate heating device, comprising: a plurality of heating modules, including a processing container for processing a substrate; and an exhaust path shared with each heating module, and the substrate heating device controls the exhaust volume of each heating module with high precision . The substrate heating device includes: a plurality of heating modules, each including a gas supply port for taking cleaning gas into the processing atmosphere in the processing container and an exhaust port for exhausting the processing atmosphere; connected to each exhaust port the individual exhaust paths; the common exhaust path connected to the downstream end of each individual exhaust path; the branch path that is branched to each individual exhaust path and opens to the outside of the processing container; and the exhaust volume adjustment section , which adjusts the flow rate ratio of the amount of exhaust gas discharged from the exhaust port side to the common exhaust path and the amount taken into the common exhaust path from the outside of the processing container via the branch path. This suppresses fluctuations in the gas flow rate from each individual exhaust path to the common exhaust path.

Description

technical field [0001] The present invention relates to a substrate heating device for heating a substrate placed on a hot plate, a substrate heating method, and a storage medium storing a computer program. Background technique [0002] The manufacturing process of a semiconductor device includes a step of heat-treating a semiconductor wafer (hereinafter referred to as "wafer") as a substrate on which a chemical solution has been applied, using a heating device. In this heat treatment, in order to remove sublimates generated from the chemical solution, the inside of the processing container may be exhausted while placing the wafer on a heating plate provided in the processing container. For example, in a semiconductor manufacturing apparatus having a layered structure, such a heating device may be provided for each layer, and a plurality of heating modules each including the above-mentioned processing container may be installed in each layer. Furthermore, for example, each ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67G03F7/16
CPCG03F7/168H01L21/67011H01L21/67017H01L21/68742F27B17/0025H01L21/67103
Inventor 水田诚人高柳康治
Owner TOKYO ELECTRON LTD
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