Semiconductor laser and preparation method thereof

Abstract

The invention discloses a semiconductor laser. A shearing loss region is disposed in an inner ridge region of the surface of one side of a transport layer, which is backed on to a substrate; blind holes are formed in the shearing loss region; a distance between the bottom surface of each blind hole and the surface of one side of a second cladding, which faces the substrate, is smaller than a length of an evanescent wave in the transport layer. The blind holes can influence the light field characteristics of light transmission in the semiconductor laser by influencing the evanescent wave. The shearing loss region is a region which is at a distance smaller than 25% of a length of a wide edge of the inner ridge region from any one long edge of the inner ridge region and at a distance smallerthan 20% of a length of the long edge of the inner ridge region from any one wide edge of the inner ridge region, the blind holes can effectively increase loss of a high-order mode in the semiconductor laser and improve beam quality of laser; and meanwhile, a width of a waveguide of the semiconductor laser does not need to be reduced, so that the semiconductor laser has high brightness. The invention further provides a preparation method of a semiconductor laser, and the prepared semiconductor laser also has the beneficial effects above.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser and a method for preparing the semiconductor laser. Background technique [0002] The brightness of a semiconductor laser is proportional to the ratio of power to beam quality, reflecting the laser power per unit solid angle. In practical applications, semiconductor lasers are often expected to have high output power and excellent beam quality, that is, high brightness. Most of the existing methods are to reduce the width of the waveguide of the semiconductor laser, thereby reducing the number of lateral modes and improving the beam quality. However, reducing the width of the waveguide also reduces the area of ​​the gain region, so the output power is also greatly increased. decline. [0003] Therefore, how to improve the beam quality of the semiconductor laser without significantly reducing the output power of the semiconducto...

AI Technical Summary

Problems solved by technology

Most of the existing methods are to reduce the width of the waveguide of the semiconductor laser, thereby reducing the number of lateral modes and improving the beam quality. However, reducing the width of the waveguide also reduces the area of ​​the gain region, so the output power is also greatly increased. decline

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