Semiconductor laser and fabrication method thereof

Abstract

The invention discloses a semiconductor laser. A photoelectric modulation array is arranged on a surface of an inner ridge region of a ridge-shaped transmission layer and comprises a current modulation array and a light ray modulation array, wherein the current modulation array comprises a plurality of conductive units, and the plurality of conductive units have preset thicknesses. A surface, contacted with the ridge-shaped transmission layer, of a first electrode covering the conductive units can be provided with an uneven structure by the conductive units with morphology, height difference exists in an injection electrode, so that an FFB effect is controlled. The light ray modulation array comprises a blind hole, the blind hole is formed in a surface of a cover layer, the distance between a bottom surface of the blind hole and a surface of one side, facing a substrate, of a second cladding layer is smaller than the length of an evanescent wave in the ridge-shaped transmission layer,so that transmission of higher-order modes at two sides of the laser can be prevented by the blind hole, and the light beam quality of the semiconductor laser under injection of a large current is improved. The invention also provides a fabrication method of the semiconductor laser, and the fabricated semiconductor laser similarly has the beneficial effect.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser and a method for preparing the semiconductor laser. Background technique [0002] The brightness of a semiconductor laser is proportional to the ratio of power to beam quality, reflecting the laser power per unit solid angle. In practical applications, semiconductor lasers are often expected to have high output power and excellent beam quality, that is, high brightness. The problem at this stage is that the lateral mode of the wide-area semiconductor laser will reduce the overall brightness and beam quality of the laser. At the same time, as the injection current increases, the quality of the lateral beam deteriorates rapidly, which is mainly reflected in the enlargement of the lateral far field, which is called It is the far-field blooming (FF blooming) effect. [0003] In the existing technology, the width of the wide wavegui...

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Problems solved by technology

The problem at this stage is that the lateral mode of the wide-area semiconductor laser will reduce the overall brightness and beam quality of the laser. At the same time, as the injection current increases, the quality of the lateral beam deteriorates rapidly, which is mainly reflected in the enlargement of the lateral far field, which is called For the far-field blooming (FF blooming) effect

[0003] In the existing technology, the width of the wide waveguide of the semiconductor laser is mostly reduced, thereby reducing the number of lateral modes, or the purpose of improving the beam quality is achieved by means of external cavity technology, regulating carrier injection, etc., but due to reducing the waveguide The width also reduces the area of ​​the gain region, so the output power is also greatly reduced; while external cavity technology and other technologies are complex, and will increase the volume and cost of the system, which is very unfavorable for the industrial production of high-power wide-area semiconductor lasers of

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