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Epitaxial structure of deep ultraviolet semiconductor laser and preparation method thereof

An epitaxial structure, semiconductor technology, applied in the direction of semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve problems such as unfavorable product progress and development, large size and expensive lasers, and achieve simple structure, simple preparation method and easy operation, Achieve less difficult effects

Active Publication Date: 2020-05-08
HAINAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there is no wavelength ~ 210nm deep ultraviolet semiconductor laser structure appeared
The deep ultraviolet semiconductor laser that is not a semiconductor is bulky, bulky, and expensive, which is not conducive to the progress and development of related applications and products

Method used

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  • Epitaxial structure of deep ultraviolet semiconductor laser and preparation method thereof
  • Epitaxial structure of deep ultraviolet semiconductor laser and preparation method thereof
  • Epitaxial structure of deep ultraviolet semiconductor laser and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0057] The epitaxial structure of the deep ultraviolet semiconductor laser: including a thickness of 3E18cm with a doping concentration -3 , an N-type single crystal substrate 2 with a thickness of 640 μm; an N-type transition layer 3 (thickness is 350 nm, Al x N y x / y=1-0.45 in the material, the value of x / y gradually decreases with thickness), N-type lower confinement layer 4 (thickness is 1.6 μm, Al x N y x / y=0.45 in the material), the lower waveguide layer 5 (thickness is 0.15μm, Al x N y x / y=0.7 in the material), lower barrier layer 6 (thickness is 30nm, Al x N y x / y=0.85 in the material), quantum well layer 7 (thickness is 6.5nm, x / y=1), upper barrier layer 8 (thickness is 30nm, Al x N y x / y=0.85 in the material), upper waveguide layer 9 (thickness is 0.15μm, Al x N y x / y=0.7 in the material), P-type upper confinement layer 10 (thickness is 1.6 μm, Al x N y x / y=0.45 in the material) and P-type heavily doped layer 11 (thickness is 350nm, Al x N y x / y=0.45-1 i...

Embodiment 2

[0076] Epitaxial structure of deep ultraviolet semiconductor laser: including a thickness of doping concentration 3E18cm -3 , an N-type single crystal Si substrate 2 with a thickness of 640 μm; an N-type transition layer 3 (thickness is 500 nm, Al x N y x / y=1-0.55 in the material, the value of x / y gradually decreases with thickness), N-type lower confinement layer 4 (thickness is 2 μm, Al x N y x / y=0.55 in the material), the lower waveguide layer 5 (thickness is 0.25μm, Al x N y x / y=0.66 in the material), lower barrier layer 6 (thickness is 50nm, Al x N y x / y=0.83 in the material), quantum well layer 7 (thickness is 8nm, x / y=0.96), upper barrier layer 8 (thickness is 50nm, Al x N y x / y=0.83 in the material), upper waveguide layer 9 (thickness is 0.25μm, Al x N y x / y=0.66 in the material), P-type upper confinement layer 10 (thickness is 2μm, Al x N y x / y=0.55 in the material) and P-type heavily doped layer 11 (thickness is 400nm, Al x N y x / y=0.55-1 in the material...

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Abstract

The invention discloses an epitaxial structure of a deep ultraviolet semiconductor laser. The epitaxial structure comprises a substrate which is a monocrystalline N-type substrate; an N-type transition layer, an N-type lower limiting layer, a lower waveguide layer, a lower barrier layer, a quantum well layer, an upper barrier layer, an upper waveguide layer, a P-type upper limiting layer and a P-type heavily doped layer sequentially grow on the upper surface of the substrate; a P-surface electrode is prepared on the upper surface of the P-type heavily doped layer; and the N-surface electrode is prepared on the lower surface of the N-type substrate. The structure in the invention enables the semiconductor laser to have a certain output power, and enables the semiconductor laser to have highbrightness.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically relates to an epitaxial structure of a deep ultraviolet semiconductor laser and a preparation method thereof. Background technique [0002] The deep ultraviolet semiconductor laser structure is suitable for scientific research, industry, and OEM system integration development. In terms of scientific research, ultraviolet lasers can be used for atomic / analytical spectroscopy, chemical kinetics and other research. In industry, the data storage disk space of disks produced based on UV lasers is 20 times higher than that of blue lasers. In the future, deep ultraviolet laser technology will lead to the development of a new generation of nanotechnology, materials science, biotechnology, chemical analysis, plasma physics and other disciplines. [0003] At present, AlN (aluminum nitride) is the semiconductor material with the widest energy band (6.2eV) in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/20H01S5/30H01S5/323C23C14/06C23C14/22C23C14/28
CPCC23C14/06C23C14/22C23C14/28H01S5/2013H01S5/309H01S5/323H01S2304/02
Inventor 乔忠良赵志斌李再金任永学李林曲轶
Owner HAINAN NORMAL UNIV