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Semiconductor memory device and reset method thereof

A technology of a storage device and a reset method, which is applied in information storage, static memory, read-only memory, etc., and can solve problems such as inconsistencies between memory chips and memory chips

Active Publication Date: 2019-06-04
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, in such a single-chip stacked flash memory, the time period when the memory chip on the master side is busy may not match the time period when the memory chip on the slave side is busy.
For example, there is a problem that although the memory chip on the master side is not busy, if the memory chip on the slave side is busy, even if the memory chip on the slave side is selected based on the address from the host computer, the memory chip on the slave side cannot be changed. The chip executes the actions instructed by the host computer

Method used

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  • Semiconductor memory device and reset method thereof
  • Semiconductor memory device and reset method thereof
  • Semiconductor memory device and reset method thereof

Examples

Experimental program
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Embodiment

[0061] figure 1 A schematic configuration of a monolithically stacked flash memory device according to an embodiment of the present invention is shown in . The flash memory device 100 includes a master-side memory chip 200 (hereinafter referred to as a master chip) and at least one slave-side memory chip 300 (hereinafter referred to as a slave chip). In this example, one slave chip 300 is illustrated, but the flash memory device 100 may include more than two slave chips. The flash memory device 100 includes, for example, a ball grid array (ball grid array, BGA) package or a chip scale package (chip scale package, CSP) package. For example, the BGA package is to flip-chip-mount the stacked master chip and slave chip on a flexible circuit substrate, or connect to the circuit substrate by wire-bonding. The stacked master chips and slave chips are electrically connected to each other through through-silicon vias (TSVs).

[0062] The main chip 200 includes: a memory cell array 2...

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Abstract

A semiconductor memory device and a reset method thereof prevent inconsistencies in a busy state between a master side memory chip and a slave side memory chip during a reset operation. A flash memorydevice of the disclosure includes a master side memory chip and at least one slave side memory chip. A controller of the master side memory chip selects the master side memory chip or the slave sidememory chip based on an externally inputted address, and performs a reset of the selected memory chip when a reset command is inputted. The data read from a specific area of a memory cell array of themaster side memory chip is set in a register. The controller controls a readout of the reset in a manner that time required for setting the data of the register is longer than time required for the reset of the selected memory chip.

Description

technical field [0001] The present invention relates to a semiconductor memory device stacked with a plurality of dies or chips and a reset method thereof, and to a device equipped with a serial peripheral interface (SPI) function. Flash memory (flash memory). Background technique [0002] A multichip package is a package formed by stacking multiple dies or chips of the same or different types in one package, for example, by stacking memory chips of the same type to expand storage capacity, or Different storage functions are provided by stacking different kinds of memory chips. For example, in the non-volatile semiconductor memory device of Patent Document 1, a plurality of memory array chips and a control chip for controlling the memory array chips are stacked, and through electrodes of the memory array chip and through electrodes of the control chip are stacked. The electrodes are aligned, and the two through electrodes are electrically connected. In addition, in the se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10
CPCG06F3/061G06F3/0659G06F3/0688G06F3/0614G06F3/0652G06F3/0658G11C7/20G06F3/0604G06F3/0679
Inventor 山内一贵
Owner WINBOND ELECTRONICS CORP
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