Bipolar npn-type bandgap reference voltage circuit

Abstract

The invention provides a bipolar NPN type bandgap reference voltage circuit. The circuit comprises a starting circuit, a bandgap reference voltage generating circuit and a feedback circuit; the bandgap reference voltage generating circuit comprises a first current mirror, a first triode, a first triode module, a second triode module, a first resistor and a second resistor; the first triode modulecomprises at least one second triode; the emitter junction area of the first triode module is n-1 times of the emitter junction area of the first triode, wherein n is an integer greater than 1; the base of the second triode is in short-connection with the emitter of the second triode, and is then is connected with a bandgap reference voltage output node; and the collector of the second triode is connected with the collector of the first triode. A bandgap reference voltage generated by the bipolar NPN type bandgap reference voltage circuit of the invention does not upwarp with the high temperature-induced electric leakage of an NPN type triode, and the phenomenon of the high temperature-induced upwarp of the generated bandgap reference voltage can be effectively avoided.

Description

technical field [0001] The invention relates to the field of circuit design, in particular to a bipolar NPN bandgap reference voltage circuit. Background technique [0002] In the power management integrated circuit, a reference voltage with zero temperature coefficient is generally required to be used by other modules inside the chip to ensure the excellent performance of the entire chip at different temperatures. The basic principle of the bandgap reference voltage is to use the bipolar transistor (BJT) base-emitter voltage V BE The negative temperature coefficient and equivalent thermal voltage V T The positive temperature coefficients of , cancel each other out, resulting in a zero temperature drift voltage reference. In the actual circuit design, the bandgap reference voltage is often divided or doubled through the resistor network to obtain various reference voltages. However, the NPN transistor has the problem of leakage from the collector to the substrate at high ...

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Problems solved by technology

However, the NPN transistor has the problem of leakage from the collector to the substrate at high temperature, and if it is not handled properly, it will affect the bandgap reference voltage at high temperature, which will cause the reference voltage and reference current related to the bandgap reference voltage in the overall circuit to change. The fluctuations affect the performance of the overall circuit

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