A plasma radio frequency adjustment method and plasma processing device
An adjustment method and plasma technology, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as rapid impedance changes, matching circuit response time cannot reach millisecond level, and difficult to achieve pulsed plasma processing. , to achieve an obvious adjustment effect
Active Publication Date: 2021-06-01
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology
Each turn-on, turn-off or high-power, low-power switching will cause rapid changes in the impedance of the reaction chamber, and the time of each change is in milliseconds or even microseconds. Under this requirement, the traditional matching circuit is used due to the reaction time. Far from reaching the millisecond level, it is difficult to meet the needs of pulsed plasma processing
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[0051]The radio frequency matching adjustment method disclosed in the present invention is applicable to any plasma processing device that requires fast radio frequency matching, such as a plasma etching processing device, wherein common plasma etching processing devices include capacitively coupled plasma processing devices and inductively coupled plasma processing devices. For the convenience of description, the plasma processing device will be described in detail below by taking a capacitively coupled plasma processing device as an example in conjunction with the accompanying drawings.
[0052] figure 1 A capacitively coupled plasma processing device is disclosed, including a reaction chamber 100, a base 22 inside the reaction chamber, and a lower electrode inside the base. A substrate fixing device such as an electrostatic chuck 21 is included above the lower electrode, and the substrate 20 is fixed on the upper surface of the electrostatic chuck 21 . An edge ring 10 is a...
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The invention discloses a plasma radio frequency adjustment method, the adjustment method is carried out by a radio frequency power generator, the radio frequency power generator includes an automatic frequency modulation device, the radio frequency power generator outputs a pulse radio frequency periodic signal, a The controller sets several continuous radio frequency adjustment intervals, each radio frequency adjustment interval includes at least one pulsed radio frequency cycle, and the automatic frequency adjustment device performs at least one automatic frequency adjustment in each radio frequency adjustment interval, and each radio frequency adjustment interval includes A start frequency and an end frequency, the start frequency of each radio frequency adjustment interval is the end frequency of the previous radio frequency adjustment interval, and the start frequency of the first radio frequency adjustment interval is a preset frequency. The method of the present invention can quickly adjust the frequency, and can quickly find the radio frequency power corresponding to the minimum reflected power for the pulsed radio frequency period.
Description
technical field [0001] The present invention relates to a plasma radio frequency adjustment method and a plasma processing device, and more particularly relates to the technical field of matching regulation for supplying pulsed radio frequency power to a plasma processing device. Background technique [0002] In existing semiconductor processing, plasma processing equipment is widely used to process semiconductor substrates (wafers) to obtain microscopic-sized semiconductor devices and conductor connections. Plasma equipment commonly has capacitively coupled (CCP) and inductively coupled (ICP) reaction chambers. These devices generally have two radio frequency power supplies, one of which is used to ionize the reaction gas passing into the reaction chamber to generate plasma. Another RF power source is used to control the ion energy incident on the substrate surface. [0003] At present, many plasma processing processes need to use pulsed plasma processing technology, that ...
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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32165H01J37/32183H01L21/67011
Inventor 叶如彬涂乐义徐蕾梁洁
Owner ADVANCED MICRO FAB EQUIP INC CHINA