A nandflash command processing method, device, terminal and storage medium

A command processing and micro-command technology, applied in the computer field, can solve the problem of low flash memory transmission rate, and achieve the effects of improving flash memory utilization, improving read and write performance, and reducing idle time.

Active Publication Date: 2022-06-28
镕铭微电子济南有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a Nandflash command processing method, device, terminal and computer-readable storage medium to solve the problem of low flash memory transmission rate in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A nandflash command processing method, device, terminal and storage medium
  • A nandflash command processing method, device, terminal and storage medium
  • A nandflash command processing method, device, terminal and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] In order to solve the problem of low transmission rate of the existing flash memory, the present invention provides a Nandflash command processing method. The present invention divides the read and write commands of the Nandflash flash memory into several micro-commands, so that multiple micro-commands can be executed in parallel. Thereby, the read and write performance of the flash memory is improved, the utilization rate of the flash memory is improved, and the idle time of the flash memory is reduced. The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to illustrate the present invention, but not to limit the present invention.

[0046] The first embodiment of the present invention provides a Nandflash command processing method, see figure 1 , the method includes:

[0047] S101. Receive a read or write command...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Nandflash command processing method, device, terminal and computer-readable storage medium. The invention splits the read and write commands of the Nandflash flash memory into several microcommands, so that multiple microcommands can be executed in parallel, thereby improving the performance of the flash memory. Read and write performance, improve the utilization of flash memory, reduce the idle time of flash memory, and thus solve the problem of low transfer rate of existing flash memory.

Description

technical field [0001] The present invention relates to the field of computer technology, and in particular, to a Nandflash command processing method, device, terminal and computer-readable storage medium. Background technique [0002] With the continuous progress of communication and computing, people have put forward higher requirements for the transmission rate of flash memory. The operation of existing flash memory is basically serial. If you want to read the data in the flash memory, you need to issue the Lc command first, then Waiting for the flash memory data to be ready, and then reading the data from the flash memory, this operation will cause a lot of unnecessary waiting time, limit the performance of the read operation, and ultimately limit the improvement of the flash memory transfer rate. SUMMARY OF THE INVENTION [0003] The present invention provides a Nandflash command processing method, device, terminal and computer-readable storage medium to solve the pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/0659G06F3/0679G06F3/061
Inventor 周炎钧赖建东
Owner 镕铭微电子济南有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap