A Nanostructure for Selective Infrared Stealth with Different Polarization States

A nanostructured and selective technology, applied in the field of infrared detection, can solve the problems of short service life, limited frequency band range, heat accumulation, etc.

Active Publication Date: 2021-04-23
ZHONGBEI UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, low-emissivity infrared stealth coatings have a series of problems such as heat accumulation, limited frequency range, and short service life. Therefore, it is urgent to explore and develop high-performance infrared stealth materials and technologies.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Nanostructure for Selective Infrared Stealth with Different Polarization States
  • A Nanostructure for Selective Infrared Stealth with Different Polarization States
  • A Nanostructure for Selective Infrared Stealth with Different Polarization States

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a figure 1 , figure 2 The shown nanostructures with different polarization selective infrared stealth include a micro-channel heat dissipation layer 1, a thermoelectric conversion layer 2 is arranged above the micro-channel heat dissipation layer 1, and an ultra- Black material absorption layer 3, the ultra-black material absorption layer 3 is composed of a plurality of periodically arranged swastika structures 4, so that when polarized light is incident on the ultra-black material absorption layer 3, it can be absorbed and converted into heat energy , because the ultra-black material absorption layer 3 absorbs the polarized light conversion heat energy, there is a temperature difference between the ultra-black material absorption layer 3 and the micro-channel heat dissipation layer 1, so it is arranged between the ultra-black material absorption layer 3 and the micro-channel heat dissipation layer 1 The thermoelectric conversion layer 2 betwe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a nanostructure for selective infrared stealth with different polarization states, comprising a micro-channel heat dissipation layer with a thermoelectric conversion layer arranged above the micro-channel heat dissipation layer, and an ultra-black material absorption layer disposed above the thermoelectric conversion layer layer, the ultra-black material absorption layer is composed of a plurality of periodically arranged Swastika-shaped structures; the nanostructures of selective infrared stealth with different polarization states can not only convert light into heat energy, and then convert heat energy into electrical energy, through light ‑thermal and thermal‑electric conversion convert the energy absorbed by infrared into electrical energy that can be collected, and the electrical energy can be used directly, which not only improves the stealth effect and lifespan of infrared stealth materials, but also selectively absorbs incidents of different polarization states to achieve The effect of stealth can also be used as a detection analyzer to identify different polarized light.

Description

technical field [0001] The invention belongs to the technical field of infrared detection, and in particular relates to a nanostructure with selective infrared stealth in different polarization states. Background technique [0002] With the rapid development of electronic information technology and its wide application in the military field, the means of military reconnaissance have achieved high-tech. In the situation where battlefield targets are "hit when found", the advent of infrared imagers has made the once effective visible light and radar stealth technologies face the threat of being cracked. When the atmospheric conditions are good, the airborne infrared search and track system can detect the target at a distance of more than 80km. Therefore, on the basis of visible light and radar band stealth, taking into account infrared is an inevitable trend in the development of full-band stealth technology in the future. [0003] In recent years, the high-precision, intell...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00H01Q17/00B82Y30/00
CPCB82Y30/00G02B5/003H01Q17/007
Inventor 张志东张斌珍张彦军
Owner ZHONGBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products