Method for improving crystal quality of single crystal

A single crystal and crystallization technology is applied in the field of improving the crystal quality of single crystal and improving the crystal quality of bromine lead cesium single crystal, which can solve the problems of low crystal quality and segregation crystal quality, so as to adjust the growth rate, improve the crystal quality, and avoid different phases. nucleation effect

Active Publication Date: 2019-11-29
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a method for improving the quality of single crystal crystallization, which controls the crystal growth process by performing a special overheating treatment on the melt for a certain period of time before crystal growth, specifically It corrects the crystal growth process by setting a specific temperature gradient area, thereby increasing the uniformity of the melt, and at the same time regulates the supercooling degree of crystal growth to ensure the uniformity of the melt during the growth process, thereby growing high-quality single crystals. In this way, the shortcomings of the existing melt growth technology can be avoided, and the technical problems of segregation of crystal components and low crystal quality can be solved.

Method used

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  • Method for improving crystal quality of single crystal

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Experimental program
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Effect test

Embodiment 1

[0061] (1) placing the container containing the single crystal raw material in the growth zone of the vertical growth furnace;

[0062] (2) The upper part of the growth zone is provided with a first heating temperature zone, and the lower part of the growth zone is provided with a second heating temperature zone; the temperature program of the growth furnace is set, which is divided into three stages, the first stage, the upper temperature zone target The temperature is set to 525°C, and the target temperature in the lower temperature zone is set to 680°C. At this time, the corresponding first temperature gradient is 13°C / cm. When the furnace temperature reaches the set temperature, keep it warm for 15 hours; in the second stage, the target temperature in the upper temperature zone is set to 680°C, and the target temperature in the lower temperature zone is set to 535°C. At this time, the corresponding second temperature gradient is 11°C / cm . When the temperature reaches the ...

Embodiment 2

[0065] (1) placing the container containing the single crystal raw material in the growth zone of the vertical growth furnace;

[0066] (2) The upper part of the growth zone is provided with a first heating temperature zone, and the lower part of the growth zone is provided with a second heating temperature zone; the temperature program of the growth furnace is set, which is divided into three stages, the first stage, the upper temperature zone target The setting is 550°C, and the target temperature in the lower temperature zone is set to 720°C. At this time, the corresponding first temperature gradient is 17°C / cm. When the furnace temperature reaches the set temperature, keep it warm for 2 hours; in the second stage, the target temperature in the upper temperature zone is set to 620°C, and the target temperature in the lower temperature zone is set to 490°C. At this time, the corresponding first temperature gradient is 5°C / cm . When the temperature reaches the set temperatur...

Embodiment 3

[0068] (1) placing the container containing the single crystal raw material in the growth zone of the vertical growth furnace;

[0069] (2) The upper part of the growth zone is provided with a first heating temperature zone, and the lower part of the growth zone is provided with a second heating temperature zone; the temperature program of the growth furnace is set, which is divided into three stages, the first stage: the upper temperature zone target The temperature is set to 480°C, and the target temperature in the lower temperature zone is set to 640°C. At this time, the corresponding first temperature gradient is 13°C / cm. When the furnace temperature reaches the set temperature, keep it warm for 10 hours; the second stage: set the temperature in the upper temperature zone to 660°C, and set the temperature in the lower temperature zone to 490°C. At this time, the corresponding first temperature gradient is 8°C / cm. When the temperature reaches the set temperature, it is kept...

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Abstract

The invention belongs to the field of special process treatment for crystal growth, relates to a method for improving the crystal quality of a single crystal, and more particularly relates to a methodfor improving the crystal quality of a bromine-lead-cesium single crystal. The method is based on the existing method for growing the bromine-lead-cesium single crystal by adopting a vertical melt method; the technical problems of segregation of crystal components and poor crystallization quality are solved. Before crystal growth, a temperature gradient which is gradually increased from top to bottom is additionally arranged in a growth area where a single crystal raw material container is located, convection of molten single crystal raw material components is promoted, the uniformity and crystallization supercooling degree of a melt are improved, and then the bromine-lead-cesium single crystal crystallization quality is improved.

Description

technical field [0001] The invention belongs to the field of crystal growth special process treatment, relates to a method for improving the quality of single crystal crystal, more specifically, relates to a method for improving the quality of cesium lead bromide (CsPbBr 3 ) method of single crystal crystalline quality. Background technique [0002] High-energy particles such as X-rays and Y-rays play an important role in various fields of society, such as medical, military, aerospace, industrial flaw detection and so on. With the expansion of application scope and the improvement of application requirements, the sensitivity and resolution of high-energy nuclear radiation detectors are required to be higher and higher, and semiconductor single crystals are the core components of nuclear radiation detectors, which requires single crystals to have higher integrity and crystalline quality. As a new type of room-temperature nuclear radiation detection material, bromine-lead-ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/12
CPCC30B11/00C30B29/12
Inventor 郑志平傅邱云郭鹏举周东祥罗为
Owner HUAZHONG UNIV OF SCI & TECH
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