Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A non-destructive splitting method for improving the brightness of LED die

A technology of LED chips and brightness, which is applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc. It can solve the problems that the chips cannot be completely cut without damage, and achieve the effect of improving the light output efficiency and retaining the light-emitting area

Active Publication Date: 2020-12-11
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method of operation replaces laser ablation with dry etching, but in the subsequent splitting process with a splitter, abnormalities such as oblique splitting will still occur due to the impact of the splitter, and it cannot completely achieve non-destructive cutting of chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A non-destructive split method for improving the brightness of the LED tube core of the present invention, specifically comprises the following steps:

[0054] (1) Apply a protective film, adsorb the chip on the suction cup of the homogenizer, set the speed at 6000r / min, and the thickness of the protective film at 19000Å.

[0055] (2) Light exposure, the light intensity is 6.5, and the exposure time is 10s.

[0056] (3) For film drying, the temperature of the oven is set at 98°C for 10 minutes.

[0057] (4) The concentration of developing etching solution is 4.5%, the etching time is controlled at 25s, and the etching groove width is 6 μm.

[0058] (5) Cleaning is to rinse the chip with pure water for 500-510 seconds, and dry it with hot nitrogen for 9-11 minutes.

[0059] (6) For ICP etching, the gases fed are 100 sccm and 50 sccm each, the chamber pressure is 6 Torr, the ICP RF power is 300w, the BIAS RF power is 300w, and the tray temperature is 45°C.

[0060] Fur...

Embodiment 2

[0067] According to the non-destructive splitting method for improving the brightness of the LED tube core described in Embodiment 1, the difference is that

[0068] In the step (1), the set speed of the homogenizer is 6500r / min, and the thickness of the protective film is 18500Å.

[0069] The light intensity in the step (2) is 7, and the exposure time is 8s.

[0070] In the step (3), the film drying temperature is 95° C., and the drying time is 11 minutes.

Embodiment 3

[0072] According to the non-destructive splitting method for improving the brightness of the LED tube core described in Embodiment 1, the difference is that

[0073] The gas introduced in the step (6) is CL 2 、BCl 3 , the contents of which are respectively 80 sccm, the chamber pressure is 6 Torr, the ICP RF power is 400w, the BIAS RF power is 400w, and the tray temperature is 40°C.

[0074] Further, the depth of ICP etching is 85% of the chip thickness.

[0075] In the step (7), the masking film is removed, and the chip etched by ICP is placed in acetone and ethanol organic solvents successively. The temperature of acetone is 50° C. for 4 minutes, and the temperature of ethanol is 70° C. for 4 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A non-destructive slitting method to improve the brightness of the LED die. After etching to a certain depth by ICP, the back of the LED chip is directly thinned by a grinder until the die is naturally split at the depth of etching, which is effective. It solves the problems of edge chipping and oblique splitting during cutting, and because the back of the chip is not cut directly, the light-emitting area on the front of the chip is preserved to the maximum extent, and the light-emitting efficiency is effectively improved.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to a non-destructive splitting method for improving the brightness of LED tube cores. Background technique [0002] Due to its high luminous efficiency, wide color range, and long service life, LED chips have been widely valued in the semiconductor lighting industry, and have been widely used in various fields such as display screens, traffic lights, landscape lighting, and automotive status displays. Especially in recent years, with the development of technology and breakthroughs, the small-pitch screens used for display screens such as mobile phones have made great progress. Coupled with the rising production costs, higher requirements have been placed on the brightness and size of LED dies. While the size of the die is reduced to further increase the output, the luminance of the die must maintain a high test result, which puts forward more stringent requirements for the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/78H01L21/306H01L21/02
CPCH01L21/02013H01L21/02016H01L21/30604H01L21/78H01L33/005
Inventor 郑军刘晓闫宝华肖成峰
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com