A Cutting Method for Reducing Cutting Loss of LED Chips

A technology of LED chip and cutting method, which is applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc., can solve the problems of large loss in the light-emitting area of ​​the chip, increased contact area between the blade back and the surface of the chip, cracking, etc. The effect of cutting loss, improving light extraction efficiency and reducing cutting loss

Active Publication Date: 2021-10-01
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method of operation is a typical mechanical cutting. The disadvantage is that the full-thickness cutting along the half-cut cutting path, the height of the knife must be reduced and the depth of the knife should be deepened, and the contact area between the back of the knife and the surface of the chip will increase. The region's losses are also the largest

Method used

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  • A Cutting Method for Reducing Cutting Loss of LED Chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Step 1: Prepare the LED chip;

[0065] Step 2: Take the prepared LED chip, and cut the P side of the LED chip into half at intervals according to the period set by the process; the cutting depth is 5% of the thickness of the LED chip;

[0066] Step 3: Take the half-cut LED chip and test it with a testing machine. The test current is 20mA, the test time is 5ms, and the corresponding brightness, voltage and wavelength of the LED chip are tested;

[0067] Step 4: Adsorb the tested LED chip on the suction cup of the glue homogenizer, use the glue homogenizer to apply negative glue on the P surface, and form a protective film on the P surface after coating; the speed of the glue homogenizer suction cup is first 2500r / 3000r / min after min, the glue thickness is

[0068] Step 5: Place the glue-coated LED chip on the platform of the photolithography machine for light exposure, and expose the cutting line on the protective film; the light intensity during exposure is 6 μW / cm ...

Embodiment 2

[0079] Step 1: Prepare the LED chip;

[0080] Step 2: Take the prepared LED chip, and cut the P side of the LED chip into half at intervals according to the period set by the process; the cutting depth is 8% of the thickness of the LED chip;

[0081] Step 3: Take the half-cut LED chip and test it with a testing machine. The test current is 20mA, the test time is 5ms, and the corresponding brightness, voltage and wavelength of the LED chip are tested;

[0082]Step 4: Adsorb the tested LED chip on the suction cup of the glue homogenizer, and use the glue homogenizer to apply negative glue on the P surface, and form a protective film on the P surface after the glue is applied; the speed of the glue homogenizer suction cup is first 3000r / 4000r / min after min, the glue thickness is

[0083] Step 5: Place the glue-coated LED chip on the platform of the photolithography machine for light exposure, and expose the cutting line on the protective film; the light intensity during expos...

Embodiment 3

[0094] Step 1: Prepare the LED chip;

[0095] Step 2: Take the prepared LED chip, and cut the P side of the LED chip into half at intervals according to the period set by the process; the cutting depth is 10% of the thickness of the LED chip;

[0096] Step 3: Take the half-cut LED chip and test it with a testing machine. The test current is 20mA, the test time is 5ms, and the corresponding brightness, voltage and wavelength of the LED chip are tested;

[0097] Step 4: Adsorb the tested LED chip on the suction cup of the glue homogenizer, use the glue homogenizer to apply negative glue on the P surface, and form a protective film on the P surface after coating; the speed of the glue homogenizer suction cup is first 4000r / 5000r / min after min, the glue thickness is

[0098] Step 5: Place the glue-coated LED chip on the platform of the photolithography machine for light exposure, and expose the cutting line on the protective film; the light intensity during exposure is 10μW / cm...

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Abstract

The invention discloses a cutting method for reducing the cutting loss of LED chips. The invention first cuts the P surface of the chip in half, and uses a testing machine to test, so as to facilitate the output of photoelectric parameters such as brightness, voltage, and wavelength of the chip; Coating photoresist on the P side of the chip to form a protective film, and then exposing and developing the P side of the chip to corrode and expose the cutting line; then coating the photoresist on the N side of the chip to protect the N side metal and facilitate Subsequent dry etching; wash off the protective film on the P side and paste the blue film, and finally wash off the adhesive film on the N side, pour the film, and end the cutting operation. The invention designs a cutting method for reducing the cutting loss of LED chips, which is designed by using the N-face adhesive film and combined with dry etching, which effectively avoids edge chipping and flying pieces during chip cutting, and reduces the chip cutting loss , At the same time, it also ensures the light extraction efficiency of the die core, improves the product yield, and has high practicability.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to a cutting method for reducing cutting loss of LED chips. Background technique [0002] Due to its high luminous efficiency, wide color range, and long service life, LED chips have been widely valued in the semiconductor lighting industry, and have been widely used in various fields such as display screens, traffic lights, landscape lighting, and automotive status displays. Especially in recent years, with the development of technology and breakthroughs, the small-pitch screens used for mobile phones, outdoor displays, etc. However, the requirements for products are getting smaller and smaller, and the LED core is facing higher requirements. While the size of the core is reduced to further increase the output, the luminous brightness of the core must also maintain a high test result. The manufacturing process of the die puts forward more stringent requirements. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/302H01L21/266
CPCH01L21/266H01L21/302H01L33/005
Inventor 郑军李琳琳齐国健
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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