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Methods of forming rdl and structures formed therefrom

A conductive component and photoresist technology, which is applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve problems such as solder bridging, limiting the number of solder balls, and limiting the number of I/O pads

Active Publication Date: 2021-11-30
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of a limited area of ​​the die, the number of I / O pads is limited due to the limitation of the pitch of the I / O pads
If the pitch of the pads is to be reduced, solder bridging may occur
In addition, under the requirement of fixed ball size, the solder ball must have a certain size, which in turn limits the number of solder balls that can be packaged on the surface of the die

Method used

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  • Methods of forming rdl and structures formed therefrom
  • Methods of forming rdl and structures formed therefrom
  • Methods of forming rdl and structures formed therefrom

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Embodiment Construction

[0018] The following disclosure provides many different embodiments or examples for implementing different components of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. components so that the first component and the second component may not be in direct contact with each other. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship bet...

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Abstract

A method includes encapsulating a device die in an encapsulation material, planarizing the device die and the encapsulation material, and forming a plurality of first conductive features electrically coupled to the device die. The step of forming the plurality of first conductive features includes a deposition and etching process including depositing a blanket copper-containing layer, forming a patterned photoresist over the blanket copper-containing layer, and etching the blanket copper-containing layer to The photoresist pattern is transferred to the blanket copper-containing layer. Embodiments of the invention relate to methods of forming RDLs and structures formed therefrom.

Description

technical field [0001] Embodiments of the invention relate to methods of forming RDLs and structures formed therefrom. Background technique [0002] As semiconductor technology develops, semiconductor chips / die become smaller and smaller. At the same time, more functions need to be integrated into the semiconductor die. Consequently, semiconductor die need to have more and more I / O pads packed into smaller areas, and the density of I / O pads increases rapidly over time. As a result, packaging of semiconductor dies becomes more difficult, which adversely affects packaging yields. [0003] Traditional packaging techniques can be divided into two categories. In the first category, the dies on the wafer are packaged before sawing. This packaging technique has some advantageous features, such as higher yield and lower cost. Additionally, less underfill or molding compound is required. However, this packaging technique also has disadvantages. As the size of the dies becomes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60H01L25/18H01L23/482
CPCH01L24/02H01L25/18H01L24/03H01L2224/0231H01L2224/02331H01L2224/02333H01L2224/02379H01L2224/02381H01L2224/02373H01L2224/0362H01L2924/181H01L2924/15311H01L21/6835H01L21/568H01L2221/68372H01L2221/68345H01L2221/68359H01L23/3128H01L21/6836H01L2221/68331H01L2224/04105H01L2224/12105H01L2224/24137H01L2224/73267H01L2224/32225H01L2224/92244H01L24/19H01L2225/0651H01L2225/06568H01L2225/1035H01L2225/1058H01L2224/48227H01L2924/18161H01L2224/81005H01L2224/16238H01L2224/0401H01L2224/04042H01L2224/73204H01L2224/32145H01L25/105H01L25/50H01L25/0655H01L24/20H01L24/24H01L24/82H01L2224/83101H01L2924/00014H01L24/83H01L2224/8385H01L2224/48091H01L24/48H01L2224/13101H01L24/16H01L24/13H01L23/5389H01L23/49816H01L2924/00012H01L2224/45099H01L2924/014H01L2224/16225H01L2924/00H01L21/565H01L21/027H01L21/32139H01L21/288H01L21/76837H01L23/481H01L21/4853H01L21/4857H01L23/3107H01L23/5383H01L23/5386H01L2224/214
Inventor 郭宏瑞谢昀蓁蔡惠榕余振华
Owner TAIWAN SEMICON MFG CO LTD