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Terahertz phase shifter with symmetrical impedance phase shifting microstructure

A symmetrical impedance, terahertz technology, applied in the field of terahertz technology, can solve the problems of less research on terahertz phase shifters and no device structure solutions, and achieve the effect of excellent linearity

Inactive Publication Date: 2020-01-14
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the research on terahertz phase shifters is still relatively small, and there is no mature device structure solution

Method used

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  • Terahertz phase shifter with symmetrical impedance phase shifting microstructure
  • Terahertz phase shifter with symmetrical impedance phase shifting microstructure
  • Terahertz phase shifter with symmetrical impedance phase shifting microstructure

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Embodiment Construction

[0014] see figure 1 , 2 , the present invention provides a terahertz phase shifter with a symmetrical impedance phase-shifting microstructure, three phase-shifting microstructures are arranged side by side along the split plane of the WR3 standard waveguide E plane, and the split planes are the waveguide axis and The plane defined by the midline of the E plane parallel to it; each phase-shifting microstructure consists of 4 sub-modules arranged on the quartz dielectric substrate 20, each sub-module includes a Schottky diode 21 and a probe 22, Xiao One end of the Teky diode is connected to the probe, and the other end is connected to the bonding pad 23. The four probes are arranged in an orthogonal matrix, and the long axes of the probes are arranged along two straight lines parallel to and perpendicular to the axis of the waveguide; the probes are located inside the waveguide. cavity. 24 is the via hole ground wire.

[0015] The present invention adopts the WR3 standard rec...

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Abstract

The invention provides a terahertz phase shifter with a symmetrical impedance phase shifting microstructure, and relates to terahertz technology. Three phase shifting microstructures are arranged in parallel along the slitting plane of the E plane of a WR3 standard waveguide, and the slitting plane is determined by the waveguide axis and the midline of the E plane parallel to the slitting plane. Each phaseshifting microstructure is composed of four sub-modules arranged on a quartz dielectric substrate. Each sub-module comprises a Schottky diode and a probe. One end of the Schottky diode is connected with the probe, and the other end is connected with a bonding disk.The four probes are arranged in an orthogonal matrix type, and the long axes of the probes are arranged along two straight lines parallel and perpendicular to the waveguide axis. The probes are located in the cavity of the waveguide. The terahertz phase shifter model realizes four different phase shifts of 0, 60, 120 and 180degrees and showsexcellent linearity.The average insertion loss corresponding to each state is reduced by 1.3 dB and the average return loss is greater than 10dB.

Description

technical field [0001] The present invention relates to terahertz technology. Background technique [0002] Terahertz (TeraHertz, THz) waves include electromagnetic waves with a frequency of 0.1 to 10THz, so Terahertz waves have the advantages of high natural frequency and wide bandwidth, so Terahertz (THZ) radar has high spatial resolution and distance resolution. . Among them, the phased array radar has the advantages of flexible wave scanning, ability to track multiple targets, and good anti-interference performance. As a key component of the terahertz (THZ) phased array, the cost and performance of the phase shifter directly affect the phased array radar system. cost and performance. Therefore, it is of great practical significance to study high-performance, easy-to-implement, and low-cost THz phase shifters to improve the performance and structure of phased arrays and realize small, low-power THz phased array radars. [0003] The short-wavelength band of THz waves ca...

Claims

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Application Information

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IPC IPC(8): H01P1/185H01Q3/30
CPCH01P1/185H01Q3/30
Inventor 史金鑫史宗君周翼鸿兰峰杨梓强
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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