Anti-aging photoelectric displacement sensor
A photoelectric displacement and sensor technology, used in photovoltaic power generation, instruments, circuits, etc., can solve the problems of difficult uniformity of composition, difficult to achieve, and strict requirements for oxide layer thickness, and achieve simple preparation, low cost, and optimal sensitivity and linearity. Effect
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Embodiment 1
[0019] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)200s, made into a thin film with a thickness of about 25 nm.
Embodiment 2
[0021] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)400s, made into a thin film with a thickness of about 49 nm.
Embodiment 3
[0023] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)600s, made into a thin film with a thickness of about 74 nm.
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