Anti-aging photoelectric displacement sensor

A photoelectric displacement and sensor technology, used in photovoltaic power generation, instruments, circuits, etc., can solve the problems of difficult uniformity of composition, difficult to achieve, and strict requirements for oxide layer thickness, and achieve simple preparation, low cost, and optimal sensitivity and linearity. Effect

Inactive Publication Date: 2014-09-03
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thickness of the oxide layer is demanding and the composition is difficult to be uniform, which is difficult to achieve in practical applications.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)200s, made into a thin film with a thickness of about 25 nm.

Embodiment 2

[0021] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)400s, made into a thin film with a thickness of about 49 nm.

Embodiment 3

[0023] Clean the Si substrate with acetone and deionized water in an ultrasonic cleaner, dry it, put it into a magnetron sputtering chamber, and evacuate it to 10 -5 After Pa, pass in argon gas and adjust the gas flow meter to make the pressure reach 0.7Pa, set the sputtering power to 40W, and sputter the Al-doped ZnO target (2% Al 2 o 3 , 98% ZnO)600s, made into a thin film with a thickness of about 74 nm.

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Abstract

The invention relates to an anti-aging photoelectric displacement sensor, which comprises a semiconductor substrate, an Al ZnO-doped film on the surface of the semiconductor substrate and two indium point electrodes on the surface of the film. The anti-aging photoelectric displacement sensor on the basis of lateral photovoltaic effects can be obtained by depositing the Al ZnO-doped film on the Si substrate through ultrasonic cleaning to replace a metal film layer in a metal- oxide-semiconductor structure. The nonlinear rate of the sensor can be controlled to be 3.22%, and the position sensitivity can reach 41.85mV/mm. As the Al ZnO-doped target material is directly used, the manufacturing technology is simple, and large-scale preparation in actual production can be realized.

Description

technical field [0001] The invention relates to the field of photoelectric displacement detectors, in particular to a photoelectric displacement sensor based on the lateral photovoltaic effect. Background technique [0002] In recent years, photoelectric displacement sensors based on the lateral photovoltaic effect have received great attention in metal-oxide-semiconductor (MOS) or metal-semiconductor (MS) structure-based photoelectric displacement sensors because of their high precision, good linearity and relatively low cost. It has attracted great attention and has been widely used in military, industrial testing and other fields. Different metal materials including titanium (Ti), cobalt (Co), and copper (Cu) have been extensively studied for improving the linearity or sensitivity of displacement sensors. However, in practical applications, metal materials are easily oxidized, causing device aging and affecting device performance. Therefore, it is necessary to explore p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0264H01L31/09H01L31/18G01B7/02
CPCG01B7/02H01L31/022483H01L31/1133H01L31/1804Y02E10/547Y02P70/50
Inventor 何丹农卢静尹桂林
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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