33results about How to "The deposition process is easy to control" patented technology

The invention discloses a method for preparing an anti-attrition MoS2/C/Ti composite film by magnetron sputtering in the technical field of solid lubrication, comprising the following steps: firstly,polishing a substrate, then ultrasonically washing and drying the substrate, and then packing the substrate in a sputtering chamber; secondly, carrying out pure titanium sputtering and composite layersputtering in the sputtering chamber, then obtaining the anti-attrition composite film by magnetron sputtering when the sputtering chamber is naturally cooled to the room temperature. The invention has simple process and easily controlled precipitation process; the precipitated film can be directly used as an anti-attrition protection film on the surface of a mechanical part without thermal treatment; and the composite film has the nano hardness of 5.9GPa and the friction coefficient of 0.03.

The invention discloses a preparation method of an aptamer sensor for detecting antibiotic residue, belonging to the technical field of safety test of agricultural products. The method comprises the steps of carrying out electrochemical polymerization on a gold electrode and thionine to obtain electrically polymerized thionine electrode; after that, evenly dripping the prepared carbon nano tube-graphene nano-composition onto the surface of the electrically polymerized thionine electrode; drying in the air, and then soaking the electrode into antibiotic aptamer solution; washing, drying in the air, and closing by bull serum albumin (BSA) solution to obtain the antibiotic aptamer sensor. The prepared aptamer sensor has the advantages of not needing pretreatment, being high in analysis speed, simple in an operation system, high in accuracy, high in specificity, low in cost, rapid in response and the like, and has the limit of detection reaching up to 0.8nm, thus being suitable for rapidly detecting the antibiotic residue.

The invention relates to a method for preparing an W-doped Al2O3 high-resistance membrane through atomic layer deposition and aims at solving the problems that in the prior art,the thickness and the doping ratio of the membrane cannot be accurately controlled, and particularly defects exist when the accuracy of controlling the thickness of the membrane reaches an atom level and large-area uniformgrowth is realized at the same time. The method comprises the following steps of (1) putting a matrix into a deposition chamber; (2) vacuumizing the deposition chamber, heating the matrix; (3) performing Al2O3 deposition circulation for 2-5 times, wherein single Al2O3 deposition comprises the following steps of (3.1) introducing a precursor Al source into the deposition chamber, and purging the deposition chamber with the Al source at deposition chamber exposure set time; (3.2) introducing a precursor oxygen source to obtain a single layer Al2O3; and (3.3 ) purging the deposition chamber; (4)performing W deposition for 1-2 times, wherein the step of performing W deposition for 1-2 times comprises the following steps of (4.1) introducing a precursor W source into the deposition chamber, and purging the deposition chamber; (4.2) introducing a reducer to obtain a single-layer W metal element; and (4.3) purging the deposition chamber; and (5) sequentially conducting the step (3) and the step (4) repeatedly for many times to obtain the W-doped Al2O3 high-resistance membrane.

The invention relates to a deposition method of a Cu/ZnO/Al photoelectric transparent conducting film, belonging to the field of transparent conducting materials. The method comprises the following steps: (1) sequentially carrying out ultrasonic cleaning on a substrate with acetone, ethanol and deionized water, blow-drying with nitrogen gas, and sending the substrate into a reaction chamber; (2) depositing a magnetron sputtering Al film; (3) preparing a middle-layer ZnO film by organic substance chemical vapor deposition; (4) depositing a magnetron sputtering Cu film; and (5) carrying out high-temperature annealing on the Cu/ZnO/Al multilayer-structure transparent conducting film at 100-400 DEG C for 30 minutes to obtain the Cu/Al-codoped ZnO photoelectric transparent conducting film. The preparation technique is simple, and the deposition process is easy to control. The transparent conducting film has the advantages of favorable uniformity, excellent photoelectric properties and low resistivity (down to 8.0*10<-4>Omega.cm), and the light transmittance is up to higher than 82%. The transparent conducting film can be used for manufacturing transparent electrodes of photoelectric devices, such as solar cells, light-emitting diodes, LCDs (liquid crystal displays), mobile phones and the like.

The invention discloses a sulfide annealing copper indium gallium sulfur solar cell thin film material preparation method after double-potential step method electrodeposition. The method comprises the steps that copper and gallium metal salt is used as a main raw material; the main raw material is dissolved in an ionic liquid at a certain concentration; a copper gallium precursor thin film is prepared on ITO conductive glass through double-potential cycle step method electrodeposition; sulfide annealing is carried out on the precursor thin film; in the annealing process, indium in the ITO conductive layer diffuses into the thin film; and finally a copper indium gallium sulfur thin film is generated. Compared with a traditional constant potential deposition technology, the method provided by the invention has the advantages that by controlling double potential pulse potential, controllable preparation of the crystalline phase, the composition, the morphology and the like of the thin film can be realized; pore structures are reduced; the thin film morphology is improved; the plating rate is improved; and hydrogen evolution reaction does not produce any adverse effect on the thin film in the deposition process. Compared with a high-vacuum vapor phase method, the method provided by the invention has the advantages of good film quality, low cost, high controllability and the like.

The invention relates to an anti-aging photoelectric displacement sensor, which comprises a semiconductor substrate, an Al ZnO-doped film on the surface of the semiconductor substrate and two indium point electrodes on the surface of the film. The anti-aging photoelectric displacement sensor on the basis of lateral photovoltaic effects can be obtained by depositing the Al ZnO-doped film on the Si substrate through ultrasonic cleaning to replace a metal film layer in a metal- oxide-semiconductor structure. The nonlinear rate of the sensor can be controlled to be 3.22%, and the position sensitivity can reach 41.85mV/mm. As the Al ZnO-doped target material is directly used, the manufacturing technology is simple, and large-scale preparation in actual production can be realized.

The invention relates to a depositing method for an Ag/ZnO/Mg photoelectric transparent conducting thin film, and belongs to the field of transparent conducting materials. The depositing method is conducted according to the following steps that (1) a substrate is subjected to ultrasonic cleaning sequentially with acetone, ethyl alcohol and deionized water, then dried with nitrogen and put into a reaction chamber; (2) deposition of a magnetron sputtering Mg film is conducted; (3) a middle layer ZnO thin film is prepared through organic matter chemical vapor deposition; (4) deposition of a magnetron sputtering Ag film is conducted; and (5) the transparent conducting thin film of the Ag/ZnO/Mg multi-layer structure is subjected to high-temperature annealing, the annealing temperature is 200-600 DEG C, the annealing time is 20 min, and the ZnO photoelectric transparent conducting thin film jointly doped with Ag and Mg is obtained. The preparation process is simple, and the depositing process is easy to control. The prepared transparent conducting thin film is good in uniformity and excellent in photoelectric performance, the electrical resistivity can be as low as 7.0*10<-4> ohm.cm, and the light transmittance can reach 85% or above. The transparent conducting thin film can be used for manufacturing transparent electrodes of photoelectric devices such as solar cells, light emitting diodes, LCDs and mobile phones.

The invention relates to a micro-channel plate and a method for preparing a Ni-doped Al2O3 high-resistance film on an inner wall of the micro-channel plate. The Ni-doped Al2O3 high-resistance film isacquired by depositing different component materials on the inner wall of the micro-channel plate through an atomic layer deposition method; when depositing, the deposition times of Al2O3 and Ni are controlled in a great circulation so as to control a Ni-doped ratio, thus the resistivity of the film can be precisely controlled with the range of 106-1010 omega.cm; and the thickness of the film is controlled by controlling the circulation times of the great circulation. The resistivity of the prepared film is basically kept constant in a high temperature working environment or after high temperature annealing; and the technical problem of unstable performance of the micro-channel plate caused by great change of the resistivity of the surface film of the existing micro-channel plate under high temperature conditions is solved.

The invention relates to the technical field of material frictional wear and solid lubrication, in particular to a WSx/Me/a-C/Me nanometer multi-layer structure solid lubricating film and a preparation method thereof. The solid lubricating film comprises a matrix (1), a metal transition layer (2) and a nanometer multi-layer film (3); the nanometer multi-layer film is of a layered structure formedby a plurality of nanometer composite units; each nanometer composite unit comprises a WSx layer (4), a metal layer (5), an amorphous carbon film layer (6) and a metal sublayer (7); and the materialsof the metal layer and the metal sublayer are identical or different. The solid lubricating film provided by the invention has excellent oxidation resistance, is relatively low in friction coefficient, excellent in carrying capacity and wear resistance, relatively good in combination state with the matrix, long in service life, simple in preparation technology, liable to control deposition process, low in cost and safe in preparation process without pollution, can be applied to lubrication protective films on the surfaces of components and parts in the machinery field and has a wide application prospect.

The invention belongs to the technical field of transparent conductive electrode preparing, and relates to a method for preparing a transparent copper thin film conductive electrode through a replacement reaction via an atomic layer deposition technology. The method comprises the steps that firstly, a transparent substrate is subjected to cleaning treatment and then blow-dried through nitrogen; then, two separated protective films are pasted on the surface of the same side of the transparent substrate, the two protective films are symmetrically located at the positions, close to the edge, of the surface of the substrate, a graphical transparent substrate is obtained, and then the graphical transparent substrate is fed into a reaction chamber of atomic layer deposition equipment to carry out growth of a transparent copper thin film; and finally, the transparent substrate and the transparent copper thin film growing on the transparent substrate in a deposition manner are subjected to high-temperature annealing, the annealing temperature ranges from 200 DEG C to 300 DEG C, the annealing time ranges from 20 min to 30 min, and the graphical uniform transparent copper thin film conductive electrode is obtained on the transparent substrate. The transparent copper thin film conductive electrode prepared through the method is good in uniformity and excellent in photoelectric property and can be used for manufacturing solar cells, light-emitting diodes, LCDs, mobile phones and other photoelectric devices.

The invention relates to a method for preparing a Mo-doped Al2O3 high-resistance film by atomic layer deposition, and solves the problems of incapability of precisely controlling the film thickness and the mixing ratio, in particular existence of defects on the aspects of control of the film thickness precision reaching the atomic grade and synchronous realization of large-area uniform growth in the prior art. The method comprises the following steps: 1) a basal body is put in a deposition chamber; 2) the deposition chamber is vacuumized; and the basal body is heated; 3) 8-11 times of Al2O3 deposition circulation are performed; and single Al2O3 deposition comprises the following steps: 3.1) a precursor Al source is introduced into the deposition chamber; the Al source is exposed in the deposition chamber by set time; and the deposition chamber is purged; 3.2) a precursor oxygen source is introduced to obtain single-layer Al2O3; and 3.3) the deposition chamber is purged; 4) once Mo deposition is performed: 4.1) a precursor Mo source is introduced in the deposition chamber; and the deposition chamber is purged; 4.2) a reducing agent is introduced to obtain single-layer Mo metal simple substances; and 4.3) the deposition chamber is purged; and 5) the steps 3) and 4) are repeated by multiple times in sequence to obtain the Mo-doped Al2O3 high-resistance film.

The invention discloses a manufacturing technology of a foam metal plate for a radiator fin. The manufacturing technology includes the steps that thermoplastic conducting plastics are made into the foam plate, and the foam plate is bent into the fin; the foam plate serves as a cathode, metal forming the foam metal plate serves as an anode, and the cathode and the anode are soaked into a solution containing metal positive ions of the foam metal plate; the cathode and the anode are connected with a power source, and the power source is connected with a voltage regulation circuit; the voltage size is changed in real time according to the required foam metal deposition speed, and the metal can be deposited; and the thermoplastic conducting plastics in the foam plate are removed through sintering. The manufacturing technology is flexible and ingenious, and the deposition technology and a conducting plastic skeleton are combined; and moreover, the voltage regulating circuit is used for leading the deposition speed, the obtained foam metal plate is in a fin form, and using is made convenient.

The invention discloses a method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition. In order to overcome the hydrogen evolution phenomenon in an aqueous solution, caused by electrodeposition of aluminum, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing afterlayered electrodeposition deposits an aluminum thin film by means of a fuse salt electrodeposition method, then dissolves the copper metal salt in deionized water, electrodeposits copper on the aluminized film, dissolves indium metal salt in the deionized water, electrodeposits indium on the aluminized/copper-plated film, and then selenizes and anneals the precursor film to obtain a copper indiumaluminum selenium film. The method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition can realize controllable preparation of film compositions, crystal structure, morphology, and the like by means of layered control of the deposition current density and time of each layer of film. Compared with an electrodeposition method in one-step aqueous solution, the film prepared by the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has higher purity and does not have CuxSey or InxSey binary phase. Compared with a high vacuum method, the method of preparing copper indium aluminum selenium solar cell film materials through selenized annealing after layered electrodeposition has high controllability, simple preparation process, high utilization rate of raw materials, low cost, and high repeatability, and is easy to achieve preparation of films with large area and high quality.

The invention discloses a method for preparing a nano-structure material by electrodeposition based on corrosion of an amorphous alloy anode material, and the preparation method comprises the following steps: proportioning metal elementary substances according to a target alloy ZraAlbCocMd, and smelting to obtain a master alloy; wherein a is larger than or equal to 55 at.% and smaller than or equal to 56 at.%, b is larger than or equal to 13 at.% and smaller than or equal to 20 at.%, c is larger than or equal to 20 at.% and smaller than or equal to 28 at.%, d is larger than or equal to 0 at.% and smaller than or equal to 5 at.%, and M is any one of Nb, Cu, Ag and Ni metal elements; the obtained mother alloy is treated through a single-roller melt-spinning quenching method, so that a ZraAlbCocMd amorphous alloy strip is obtained; and in a standard three-electrode system, the obtained ZraAlbCocMd amorphous alloy strip is used as a working electrode, a target deposition substrate is used as a counter electrode, the ZraAlbCocMd amorphous alloy strip is corroded through a constant potential polarization method, and the required nano-structure material is deposited on the counter electrode. The method provided by the invention is more beneficial to reaction stability, the deposition process is easier to control, and a uniform nano-structure material can be directly deposited on the substrate.