Method for preparing anti-attrition MoS2/C/Ti composite film by magnetron sputtering
A technology of magnetron sputtering and composite thin film, which is applied in sputtering plating, ion implantation plating, coating, etc., and can solve the problem of insufficient carrying capacity and wear resistance of the film, poor bonding force of the metal substrate, and large internal stress, etc. problems, to achieve the effect of easy control of the deposition process, enhanced bonding strength, and high bonding force
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Embodiment 1
[0020] Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 0.3Pa, turn on the power, DC sputter Ti target with a thickness of about 100nm, sputtering power of 80W, working pressure of 0.3Pa, sputtering time of about 40min, turn off the power. Keep the indoor air pressure at 0.3Pa, turn on the power, and sputter MoS with radio frequency 2 Target, power 100W, DC sputtering graphite target, power 10W, DC sputtering Ti target, power 10W, working pressure 0.3Pa, sputtering time 20 minutes, turn off the power, and open the vacuum chamber after the temperature of the vacuum chamber drops to room temperature , to make a film with a film thickness of about 0.5 μm.
Embodiment 2
[0022] Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 0.3Pa, turn on the power, DC sputter Ti target with a thickness of about 100nm, sputtering power of 80W, working pressure of 0.3Pa, sputtering time of about 40min, turn off the power. Adjust and keep the indoor air pressure at 0.2Pa, turn on the power, and sputter MoS with radio frequency 2 Target, power 150W, DC sputtering graphite target, power 10W, DC sputtering Ti target, power 5W, working pressure 0.2Pa, sputtering time 33 minutes, turn off the power, after the temperature of the vacuum chamber drops to room temperature, open the vacuum chamber , to make a film with a film thickness of about 0.7 μm.
Embodiment 3
[0024] Polish the stainless steel substrate to a smoothness of less than 0.05 μm, clean it with alcohol and acetone in an ultrasonic cleaner, dry it, and put it into a sputtering chamber. Vacuum to 10 -4 Pa, enter argon gas, adjust the pressure in the vacuum chamber to 0.3Pa, turn on the power, DC sputter Ti target with a thickness of about 100nm, sputtering power of 80W, working pressure of 0.3Pa, sputtering time of about 40min, turn off the power. Adjust to keep the indoor air pressure at 1Pa, and use RF sputtering of MoS 2 Target, power 200W, DC sputtering graphite target, power 15W, DC sputtering Ti target, power 5W, working pressure 1Pa, sputtering time 50 minutes, turn off the power, after the temperature of the vacuum chamber drops to room temperature, open the vacuum chamber, A film having a film thickness of about 2.0 µm was produced.
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